Electrical contact for an LED

• US 4,864,370 A
• Filed: 11/16/1987
• Issued: 09/05/1989
• Est. Priority Date: 11/16/1987
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Rode, Daniel L., Gaw, Craig A.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US07/122,160
• Time in Patent Office: 659 Days
• Field of Search: 357/17, 357/67, 357/68, 357/70, 357/71, 357/16, 357/4, 372/46
• US Class Current: 257/94
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A high efficiency light emitting diode is achieved through the use of a patterned metal contact. The metal contact is insulated from the structure of the light emitting diode to prevent current flow and subsequent light generation underneath the electrical bond pad. This shifts the drive current out to the patterned portion of the bond pad or metal contact.

Claims

1. A light emitting diode having a high efficiency contact, comprising:

a substrate of a first conductivity;

a first epitaxial layer of the first conductivity over the substrate;

a second epitaxial layer of a second conductivity over the first epitaxial layer;

a bond pad positioned on a predetermined area of the second epitaxial layer, the bond pad having a plurality of metal lines extending therefrom for making contact to the light emitting diode; and

a dielectric layer positioned underneath the bond pad to prevent current flow directly beneath the bond pad between the bond pad and the second epitaxial layer, thereby reducing light generation directly beneath the bond pad.

2. The light emitting diode of claim 1 wherein the substrate is GaAs, the first epitaxial layer is P-type AlGaAs, and the second epitaxial layer is N-type AlGaAs, and the light emitting diode is a red LED.

3. The light emitting diode of claim 1 wherein the dielectric layer is an oxide such as silicon dioxide.

4. A light emitting diode having an electrically conductive bond pad which has a plurality of conductive lines extending from the bond pad for passing current to the light emitting diode, and an electrically insulating layer placed beneath the bond pad to reduce light generation underneath the bond pad and to shift drive current out to the conductive lines.

5. The light emitting diode of claim 4 wherein the electrically insulating layer extends from beneath the bond pad.

6. The light emitting diode of claim 4 being an AlGaAs red LED.

7. The light emitting diode of claim 4 wherein an electrically insulating layer is also placed beneath a central portion of each of the plurality of conductive lines.

8. The light emitting diode of claim 4 wherein the optical thickness of the electrically insulating layer is one half the wavelength of the light emitted from the light emitting diode.