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Method of making slotted diaphragm semiconductor devices

  • US 4,867,842 A
  • Filed: 05/16/1988
  • Issued: 09/19/1989
  • Est. Priority Date: 09/30/1982
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a slotted diaphragm semiconductor device comprising a slotted diaphragm of thin film material substantially covering a depression etched into a first surface of a semiconductor body, the method comprising the steps of:

  • providing a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body;

    applying a layer of thin film material of which the diaphragm is comprised onto the first surface;

    exposing an area of the first surface through a slot means in the layer of thin film material, the slot means being sized and oriented so that an anisotropic etch placed on the exposed surface area will undercut the diaphragm and form the depression; and

    applying the anisotropic etch to the exposed surface area to undercut the diaphragm and create the depression.

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