Semiconductor light-detecting device with alloyed isolating region
First Claim
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1. A semiconductor light detecting device having a plurality of light-detecting elements comprising:
- a substrate;
a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer selected from the group consisting of the combinations of HgTe/CdTe, HgTe/ZnTe and HgTe/MnTe;
a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer; and
an isolation region for isolating a plurality of light-detecting elements from one another, said isolation region consisting essentially of an alloy being formed by selectively irradiating the first and second stacked layers with a laser beam.
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Abstract
A semiconductor light detecting device comprises a substrate, a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer repeatedly, a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer repeatedly, and an isolation region formed by selectively irradiating the first and second stacked layers with an energy beam. A plurality of light detecting elements isolated from each other by the isolation region are formed on the substrate so as to provide the semiconductor light detecting device.
33 Citations
6 Claims
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1. A semiconductor light detecting device having a plurality of light-detecting elements comprising:
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a substrate; a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer selected from the group consisting of the combinations of HgTe/CdTe, HgTe/ZnTe and HgTe/MnTe; a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer; and an isolation region for isolating a plurality of light-detecting elements from one another, said isolation region consisting essentially of an alloy being formed by selectively irradiating the first and second stacked layers with a laser beam. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor light detecting device having a plurality of light-detecting elements comprising:
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a substrate; a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer selected from the group consisting of the combinations of HgTe/CdTe, HgTe/ZnTe and HgTe/MnTe; a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer; and an isolation region for isolating a plurality of light-detecting elements from one another, said isolation region consisting essentially of an alloy being formed by selectively irradiating the first and second stacked layers with an energy beam which is selected from the group consisting of a Nd;
YAG laser applied with a Q switch;
a ruby laser applied with a Q switch, and an electron beam.
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsShigenaka, Keitaro
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Primary Examiner(s)Mintel, William A.
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Application NumberUS07/113,069Time in Patent Office693 DaysField of Search357/30 B,30 E, 357/30 H, 357/16, 357/4, 357/61, 357/51, 357/91, 357/45, 357/47, 357/48, 357/49, 357/50, 357/32, 357/30 P, 357/7, 437/24, 437/19US Class Current257/442CPC Class CodesH01L 27/14649 Infrared imagersY10S 257/926 Elongated lead extending ax...
