Encapsulation of a photovoltaic element

• US 4,869,755 A
• Filed: 07/14/1988
• Issued: 09/26/1989
• Est. Priority Date: 07/30/1987
• Status: Expired due to Fees

• Current Assignee: NUKEM GmbH (Cameco Corporation)
• Original Assignee: NUKEM GmbH (Cameco Corporation)
• Inventors: Hoffman, Winfried, Huschka, Hans
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/218,854
• Time in Patent Office: 439 Days
• Field of Search: 136/251, 136/256, 136/259, 427/39, 427/45.1, 427/51, 437/2-5, 437/241, 437/225, 437/235, 357/72, 357/30 J
• US Class Current: 136/259
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The encapsulation of a photovoltaic element is described in which the outer surface is provided with a two layer protective film comprising a carbon film and a dielectric silicon compound film.

Claims

1. A photovoltaic element which is covered by two transparent protective films arranged one above the other to provide an inner film and an outer film, the inner film comprising a dielectric silicon compound and the outer film comprising carbon, the thickness of each film being less than 10 μ

m, and the combined thickness of the two films being less than 15 μ

m.

2. A photovoltaic element according to claim 1, wherein the film comprising carbon is amorphous or crystalline.

3. A photovoltaic element according to claim 2, wherein the film comprising amorphous carbon has a thickness of less than, 1 μ

m, and the thickness of the silicon compound film is less than 5 μ

m.

4. A photovoltaic element according to claim 1, wherein the two films completely cover the outer surface of the photovoltaic element.

5. A method for encapsulation of a photovoltaic element by covering the outer surface of the element by two transparent protective films arranged, one above the other, the method comprising the steps of:

first performing a plasma or microwave-assisted deposition from a gas phase (CVD) to apply a dielectric silicon compound in the form of a silicon nitride or silicon oxynitride film at a maximum temperature of 500°

C. to the photovoltaic element, and

applying an amorphous carbon film at a maximum temperature of 200°

C. over the inner film to form the outer film.