Encapsulation of a photovoltaic element
First Claim
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1. A photovoltaic element which is covered by two transparent protective films arranged one above the other to provide an inner film and an outer film, the inner film comprising a dielectric silicon compound and the outer film comprising carbon, the thickness of each film being less than 10 μ
- m, and the combined thickness of the two films being less than 15 μ
m.
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Abstract
The encapsulation of a photovoltaic element is described in which the outer surface is provided with a two layer protective film comprising a carbon film and a dielectric silicon compound film.
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Citations
5 Claims
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1. A photovoltaic element which is covered by two transparent protective films arranged one above the other to provide an inner film and an outer film, the inner film comprising a dielectric silicon compound and the outer film comprising carbon, the thickness of each film being less than 10 μ
- m, and the combined thickness of the two films being less than 15 μ
m. - View Dependent Claims (2, 3, 4)
- m, and the combined thickness of the two films being less than 15 μ
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5. A method for encapsulation of a photovoltaic element by covering the outer surface of the element by two transparent protective films arranged, one above the other, the method comprising the steps of:
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first performing a plasma or microwave-assisted deposition from a gas phase (CVD) to apply a dielectric silicon compound in the form of a silicon nitride or silicon oxynitride film at a maximum temperature of 500°
C. to the photovoltaic element, andapplying an amorphous carbon film at a maximum temperature of 200°
C. over the inner film to form the outer film.
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Specification