Thin film electroluminescence display device

• US 4,869,973 A
• Filed: 09/04/1987
• Issued: 09/26/1989
• Est. Priority Date: 09/05/1986
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Abe, Atsushi, Matsuoka, Tomizo, Nishikawa, Masahiro, Kuwata, Jun, Tohda, Takao, Fujita, Yosuke
• Primary Examiner(s): Swisher, Nancy A. B.
• Application Number:
  US07/093,263
• Time in Patent Office: 753 Days
• Field of Search: 428/690, 428/691, 428/917, 313/506, 313/503, 313/509
• US Class Current: 428/690
• CPC Class Codes: H05B 33/12 Light sources with substantially two-dimensional radiating surfaces
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.

Claims

1. A thin film EL display device comprising

a transparent electrode provided on a transluscent substrate,

a first dielectric layer provided on said transparent electrode,

a first thin film made of one member selected from the group consisting of calcium sulfide and a mixture containing calcium sulfide and provided on said first dielectric layer,

an EL emission layer provided on said first dielectric layer,

a second thin film made of one member selected from the group consisting of calcium sulfide and a mixture containing calcium sulfide and provided on said EL emission layer,

a second dielectric layer provided on said EL emission layer and

a back electrode provided on said second dielectric layer.

2. A thin film EL display device in accordance with claim 1 wherein;

said first dielectric layer is made of an oxide dielectric film having a dielectric constant of more than 15.

3. A thin film EL display device in accordance with claim 1 wherein;

said second dielectric layer is made of an oxide dielectric film.

4. A thin film EL display device in accordance with claim 1 wherein;

said first and second thin films are made of a mixture of calcium sulfide and zinc sulfide.

5. A thin film EL display device in accordance with claim 1 wherein;

said first dielectric layer is made of an oxide dielectric having perovskite structure.

6. A thin film EL display device in accordance with claim 1 wherein;

said first dielectric layer is made of strontium titanium binary oxide dielectrics.

7. A thin film EL display device in accordance with claim 1 wherein;

said second dielectric layer is made of barium tantalum binary oxide dielectrics.

8. A thin film EL display device in accordance with claim 1 wherein;

said EL emission layer is made of zinc sulfide activated by manganese.

9. A thin film EL display device comprising

a transparent electrode provided on a translucent substrate,

a first dielectric layer provided on said transparent electrode,

a first thin film having a 10 nm-200 nm thickness comprised of one member selected from the group consisting of calcium sulfide and a mixture containing calcium sulfide and formed on said first dielectric layer by an electron beam vapor deposition method,

an EL emission layer provided on said first dielectric layer,

a second thin film made having a 10 nm-200 nm thickness of one member selected from the group consisting of calcium sulfide and a mixture containing calcium sulfide and formed on said EL emission layer by an electron beam vapor deposition method,

a second dielectric layer provided on said EL emission layer,

a back electrode provided on said second dielectric layer.