Plasma enhanced thermal treatment apparatus

• US 4,870,245 A
• Filed: 04/01/1985
• Issued: 09/26/1989
• Est. Priority Date: 04/01/1985
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Rutledge, James L., Reed, Edwin E., Price, J. B.
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US06/718,751
• Time in Patent Office: 1,639 Days
• Field of Search: 217/121 P, 217/121 PD, 217/121 PE, 217/121 PG, 217/121 PF, 156/643, 156/345, 156/646, 204/192 E, 204/192 N, 427/34, 427/39
• US Class Current: 219/121.36
• CPC Class Codes: H01J 2237/3387 Nitriding
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32522 Temperature

Abstract

Apparatus for the nitridiation of a silicon-bearing substrate is disclosed. The apparatus includes a double walled reaction vessel having first and second concentric walls bounding a reaction volume. Temperature of the reaction volume is controlled by resistance heaters located outside the outermost of the two concentric tubes. Plasma electrodes are positioned about the reaction volume and between the two concentric tubes. The ambient between the two tubes is controlled to protect the electrodes from oxidation at the high temperatures to which they are exposed. An rf generator is coupled to the plasma electrodes and is controllable independently from the resistance heaters.

Claims

1. Apparatus for the nitridation of a silicon-bearing substrate which comprises:

a double walled reaction vessel having first and second concentric walls and bounding a reaction volume;

resistance heating means positioned exterior to said vessel for heating material within said vessel;

plasma generating electrodes positioned between said first and second walls for generating a plasma within said reaction volume;

means for controlling the ambient between said first and second walls;

first means for supplying energy to said resistance heating means; and

second means for supplying rf energy to said plasma generating electrodes independent of said first means.

2. The apparatus of claim 1 wherein said plasma generating electrodes comprise first and second electrodes for capacitively coupling rf energy to material within said reaction volume.

3. The apparatus of claim 2 wherein said first and second electrodes are designed to minimize coupling of said rf energy to said resistance heating means.

4. The apparatus of claim 2 wherein said first and second electrodes comprise partial cylinders concentric with said first and second walls.

5. The apparatus of claim 2 wherein said first and second electrodes comprise first and second sets of interdigitated fingers.

6. The apparatus of claim 5 wherein said reaction vessel has an elongate axis and said fingers extend parallel to said axis with said first and second sets being concentric with said first and second walls.

7. The apparatus of claim 2 wherein said first and second electrodes comprise spaced apart rings surrounding said reaction volume and concentric with said first and second walls.

8. The apparatus of claim 2 wherein said first and second electrodes comprise inconel.

9. The apparatus of claim 1 further comprising vacuum means for establishing a reduced pressure in said reaction volume.

10. The apparatus of claim 1 further comprising filters for isolating said resistance heating means from said rf energy.

11. The apparatus of claim 10 further comprising screen means for isolating said rf energy.

12. The apparatus of claim 10 wherein said thermal treatment comprises nitridation and said apparatus further comprises means for introducing nitrogen-bearing reactants to said reaction volume.

13. Apparatus for the plasma assisted thermal treatment of a substrate which comprises:

a first reaction tube bounding a reaction volume;

a second tube surrounding said first reaction tube;

resistance heating means outside said second tube for controlling the temperature in said reaction volume;

plasma electrodes positioned proximate said reaction volume between said first reaction tube and said second tube for generating a plasma in said reaction volume;

means for reducing the oxidation of said plasma electrodes; and

rf generating means coupled to said plasma electrode and controllable independently of said resistance heating means.

14. The apparatus of claim 13 further comprising means for isolating said rf generating means from said resistance heating means.

15. The apparatus of claim 14 wherein said means for isolating comprises low pass filters.

16. The apparatus of claim 13 wherein said means for reducing comprises flowing an inert gas over said plasma electrodes between said first reaction tube and said second tube.

17. The apparatus of claim 13 further comprising a source of etchant material for etching a workpiece positioned in said reaction volume.

18. Apparatus for the plasma enhanced thermal treatment of a semiconductor device wafer which comprises:

first and second concentric quartz tubes surrounding a reaction volume adapted for receiving a plurality of semiconductor device wafers;

plasma electrodes positioned between said first and second tubes about said reaction volume;

rf generating means coupled to said plasma electrodes for generating a plasma in said reaction volume;

means for limiting the oxidation of said electrodes;

resistance heating means surrounding said first and second concentric tubes; and

electrical means coupled to said resistance heating means for controlling the temperature in said reaction volume.

19. The apparatus of claim 18 further comprising means for supplying reactants to said reaction volume.

20. The apparatus of claim 19 wherein said means for supplying comprises a source of a nitrogen-bearing reactant.

21. The apparatus of claim 19 wherein said means for supplying comprises a source of an etchant material.