Contactless current probe based on electron tunneling
First Claim
1. A method for monitoring performance parameters of a photodiode prior to integration into a focal plane array utilizing electron tunneling techniques, comprising the steps of(a) illuminating the photodiode with infrared radiation to generate a current within the photodiode;
- (b) providing an electron tunnel probe near the photodiode;
(c) adjusting the distance between the tip of the probe and the surface of the photodiode to within 100 Angstroms;
(d) measuring the current through the photodiode via electron tunneling techniques using the tunnel current probe; and
(e) processing the measured current to determine the dynamic resistance and responsivity of the photodiode under test, whereby contact and invasion of the photodiode under test is avoided.
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Accused Products
Abstract
A method and apparatus for non-destructive monitoring of the performance parameters of a photodiode prior to integration into a focal plane array are characterized by the use of electron tunneling techniques. The photodiode under test is illuminated with infrared radiation to generate a current therein. The current within the photodiode is measured by a contactless tunnel current probe. The measured current is electrically processed to determine the dynamic resistance and responsitivity of the photodiode in order to evaluate its performance. The apparatus can also be used for testing integrated circuits in the active mode at a plurality of locations.
26 Citations
15 Claims
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1. A method for monitoring performance parameters of a photodiode prior to integration into a focal plane array utilizing electron tunneling techniques, comprising the steps of
(a) illuminating the photodiode with infrared radiation to generate a current within the photodiode; -
(b) providing an electron tunnel probe near the photodiode; (c) adjusting the distance between the tip of the probe and the surface of the photodiode to within 100 Angstroms; (d) measuring the current through the photodiode via electron tunneling techniques using the tunnel current probe; and (e) processing the measured current to determine the dynamic resistance and responsivity of the photodiode under test, whereby contact and invasion of the photodiode under test is avoided. - View Dependent Claims (2, 3, 4, 5)
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6. A method for testing an integrated circuit utilizing electron tunneling techniques, comprising the steps of
(a) energizing the circuit to its active mode; -
(b) illuminating the circuit with infrared radiation to generate a current therein; (c) providing a contactless tunnel current probe near the integrated circuit; (d) adjusting the distance between the tip of the probe and the surface of the integrated circuit to within 100 Angstroms; (e) measuring the current throughout the integrated circuit at a plurality of locations via election tunneling techniques using said contactless tunnel current probe; and (f) processing the measured current to determine the dynamic resistance and responsivity of the circuit under test, whereby contact and invasion of the circuit under test is avoided.
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7. Apparatus for monitoring performance parameters of a photodiode prior to integration into a focal plane array utilizing electron tunneling techniques, comprising
(a) a support table for supporting a photodiode under test; -
(b) means for illuminating the photodiode with infrared radiation to generate a current within the photodiode; (c) the tip of a contactless tunnel current probe located within 100 Angstroms of the surface of the photodiode for measuring the current within the photodiode via electron tunneling techniques; and (d) means for processing the current measured by said tunnel current probe to determine the dynamic resistance and responsitivity of the photodiode under test, whereby contact and invasion of the photodiode under test is avoided. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method for testing an integrated circuit, comprising the steps of
(a) energizing the circuit to its active mode (b) providing an electron tunnel probe near the integrated circuit; -
(c) adjusting the distance between the tip of the probe and the surface of the integrated circuit to within 100 Angstroms; and (d) measuring the current throughout the integrated circuit at a plurality of locations via election tunneling techniques using a contactless tunnel current probe.
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Specification