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Contactless current probe based on electron tunneling

  • US 4,870,352 A
  • Filed: 07/05/1988
  • Issued: 09/26/1989
  • Est. Priority Date: 07/05/1988
  • Status: Expired due to Fees
First Claim
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1. A method for monitoring performance parameters of a photodiode prior to integration into a focal plane array utilizing electron tunneling techniques, comprising the steps of(a) illuminating the photodiode with infrared radiation to generate a current within the photodiode;

  • (b) providing an electron tunnel probe near the photodiode;

    (c) adjusting the distance between the tip of the probe and the surface of the photodiode to within 100 Angstroms;

    (d) measuring the current through the photodiode via electron tunneling techniques using the tunnel current probe; and

    (e) processing the measured current to determine the dynamic resistance and responsivity of the photodiode under test, whereby contact and invasion of the photodiode under test is avoided.

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