Semiconductor device and method of manufacturing the same

• US 4,870,475 A
• Filed: 10/29/1986
• Issued: 09/26/1989
• Est. Priority Date: 11/01/1985
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Hamaguchi, Tsuneo, Endo, Nobuhiro
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US06/925,717
• Time in Patent Office: 1,063 Days
• Field of Search: 357/43, 357/49, 357/50, 357/71, 357/54, 357/67
• US Class Current: 257/508
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76281 Lateral isolation by selective oxidation of silicon
• CPC Class Codes: H01L 29/73 Bipolar junction transistors
• CPC Class Codes: H01L 29/7317 Bipolar thin film transistors
• CPC Class Codes: H01L 2924/10157 at the active surface

Abstract

A method of manufacturing a semiconductor device, has the steps of forming an element on a semiconductor substrate, adhering an element formation surface of the semiconductor substrate to another substrate through an insulating adhesive layer, removing the semiconductor substrate till the element formation layer is exposed, forming an insulating film on the element formation layer, removing the insulating film at a portion where contact holes are to be formed to expose the element formation layer or till the underlying element formation layer is exposed to expose electrode wirings, and forming wiring patterns connected thereto. A bipolar transistor manufactured by this method is also disclosed.

Claims

1. A bipolar transistor obtained by forming emitter, base, collector regions sequentially in a semiconductor layer surrounded by an insulative element isolation region, and forming the semiconductor layer on a supporting substrate through an insulating layer, comprising at least a high-concentration impurity layer formed in a part of said semiconductor layer at the side opposite to the emitter region, a collector electrode wiring connected to said high-concentration impurity layer, a base impurity diffusion region, formed in a part of said semiconductor layer not contacting said high-concentration impurity layer so as to extend through said semiconductor layer, and having a conductivity opposite to that of said collector impurity, and a base electrode wiring connected to said base impurity diffusion region.

2. A semiconductor device comprising:

a substrate;

an insulating layer formed on said substrate, said substrate being adhered to said insulating layer by an insulative adhesive layer;

a semiconductor device element formed on said insulating layer so as to include first regions and second regions thereof at an insulating layer side and at an opposite side of said semiconductor device element, respectively;

a field oxide film formed on said insulating layer so as to surround said semiconductor device element;

an insulator film formed to cover said semiconductor device element and said field oxide film;

a contact hole formed through said insulator film;

first electrode wirings connected via said contact hole to an insulator film side surface of said second regions of said semiconductor device element; and

second electrode wirings formed in said insulating layer and connected to a first insulating layer side surface of said first regions of said semiconductor device element.

3. A bipolar transistor comprising:

a semiconductor layer formed on a supporting substrate through an insulating layer adhered to said supporting substrate by an insulative adhesive layer, and surrounded by an insulative element isolation region, with collector, base and emitter regions of said bipolar transistor being sequentially formed in said semiconductor layer;

a film composed of a material selected from a metal and a metal silicide, and formed on at least a part of a collector region side surface of said semiconductor layer so as to form an ohmic contact with the collector region side surface of said semiconductor layer; and

a collector electrode wiring formed in said insulating layer to be connected with an insulating layer side surface of said collector region.

4. A semiconductor device comprising:

a substrate;

an insulating layer formed on said substrate being adhered to said insulating layer by an insulative adhesive layer;

a semiconductor device element formed on said insulating layer so as to include first regions and second regions thereof at an insulating layer side and an opposite side thereof, respectively;

a field oxide film formed on said insulating layer so as to surround said semiconductor device element;

an insulator film formed to cover said semiconductor device element and said field oxide film;

a first contact hole formed through said insulating film;

first electrode wirings connected via said first contact hole to an insulator film side surface of said second regions of said semiconductor device element;

a second contact hole formed through said insulator film, said field oxide film surrounding said semiconductor device element, and a part of said insulating layer; and

second electrode wirings connected via said second contact hole to a first insulating layer side surface of said first regions of said semiconductor device element.

5. A bipolar transistor comprising:

a supporting substrate;

a first insulating layer formed on said supporting substrate;

a transistor element formed on said first insulating layer with collector, base, and emitter regions thereof being sequentially formed from a first insulating layer side;

a second insulating layer formed on said transistor element;

a collector contact region formed in said collector region so as to connect said collector region to a second insulating layer side surface of said transistor element;

a metal film formed on a first insulating layer side surface of said transistor element so as to be connected with said collector contact region;

emitter, base, and collector wirings connected to said emitter region, said base region, and said collector contact region through respective contact holes formed through said second insulating layer.

6. A bipolar transistor comprising:

a supporting substrate;

a first insulating layer formed on said supporting substrate;

a transistor element formed on said first insulating layer with collector, base, emitter regions thereof being sequentially formed from a first insulating layer side;

a second insulating layer formed on said transistor element;

a base contact region formed in said base region so as to connect said base region to a first insulating layer side surface of said transistor element;

a metal film formed on the first insulating layer side surface of said collector region;

an emitter electrode wiring connected to said emitter region via a first contact hole formed through said second insulating layer;

a collector electrode wiring connected to said metal film through a second contact hole formed in said first insulating layer; and

a base electrode wiring connected to as first insulating layer side surface of said base contact region through a third contact hole formed in said first insulating layer.

7. A bipolar transistor comprising:

a supporting substrate;

a first insulating layer formed on said supporting substrate;

a transistor element formed on said first insulating layer with emitter, base, and collector regions thereof being sequentially formed from a first insulating layer side;

a second insulating layer formed on said first insulating layer so as to surround said transistor element;

a metal film formed on a surface of said collector region;

an emitter electrode wiring connected with said emitter region through a contact hole formed in said first and second insulating layers and extending from a first insulating layer side surface of said emitter region to an outside surface of said second insulating layer; and

a collector electrode wiring connected with said metal film.