High-efficiency DC-to-DC power supply with synchronous rectification
First Claim
1. A synchronous rectifier circuit comprising:
- (a) a transformer having a primary winding and a secondary winding;
(b) first, second and third controlled devices, each having a current path and a control electrode;
(c) a power supply device;
(d) a load circuit;
(e) said primary winding of said transformer being connected in series with said current path of said first controlled device and said power supply device;
(f) said secondary winding of said transformer being connected in series with said current path of said second controlled device and said load circuit;
(g) said current path of said third controlled device being connected across said load circuit;
(h) a drive pulse generator circuit having an output in the form of repetitive pulses of variable duty cycle, said output being coupled to a first control node and said output being inverted and coupled to a second control node;
(i) a first means detecting when said first control node is in a condition to activate said control electrodes of said first and second controlled devices, said first means first producing and sensing a turn-off level to said control electrode of said third controlled device then producing a turn-on level to said control electrodes of said first and second controlled devices;
(j) and a second means detecting when said second control node is in a condition to activate said control electrode of said third controlled device, said second means first producing and sensing a turn-off level to said control electrodes of said first and second controlled devices then producing a turn-on level to said control electrode of said third controlled device.
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Accused Products
Abstract
A synchronous rectifier power supply circuit has a pair of power MOS transistors connected in series with the primary and secondary of a transformer, respectively, and another power MOS transistor connected across an inductive load on the secondary side. The gates of the pair of transistors are driven by a pulse source which is pulse-width modulated in response to the load voltage, and the other transistor has its gate driven by the inverse of the pulse source. To prevent current spikes and power losses due to the pair of transistors being on during a transition period at the same time the other transistor is on, a high-gain bistable logic circuit is used to drive the gates; A NOR gate prevent the gate of the other transistor from rising to a turn-on voltage until the gates of the pair of transistors are at below a turn-on voltage. A second NOR gate prevents the gates of the pair of transistors from reaching a turn-on voltage until the gate of the other transistor is below a turn-on voltage.
139 Citations
20 Claims
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1. A synchronous rectifier circuit comprising:
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(a) a transformer having a primary winding and a secondary winding; (b) first, second and third controlled devices, each having a current path and a control electrode; (c) a power supply device; (d) a load circuit; (e) said primary winding of said transformer being connected in series with said current path of said first controlled device and said power supply device; (f) said secondary winding of said transformer being connected in series with said current path of said second controlled device and said load circuit; (g) said current path of said third controlled device being connected across said load circuit; (h) a drive pulse generator circuit having an output in the form of repetitive pulses of variable duty cycle, said output being coupled to a first control node and said output being inverted and coupled to a second control node; (i) a first means detecting when said first control node is in a condition to activate said control electrodes of said first and second controlled devices, said first means first producing and sensing a turn-off level to said control electrode of said third controlled device then producing a turn-on level to said control electrodes of said first and second controlled devices; (j) and a second means detecting when said second control node is in a condition to activate said control electrode of said third controlled device, said second means first producing and sensing a turn-off level to said control electrodes of said first and second controlled devices then producing a turn-on level to said control electrode of said third controlled device. - View Dependent Claims (2, 3, 4)
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5. A method of controlling the gate voltages of power transistors in a synchronous regulator power supply of the type having at least first, second and third power transistors, where the first and second transistors have current paths in series with the primary and secondary windings, respectively, of a transformer, and the third transistor has a current path connected across a load, comprising the steps of:
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(a) detecting the voltage across the load and generating repetitive voltage pulses having a pulse width inversely related to said voltage across the load; (b) applying said voltage pulses to the gates of said first and second transistors and applying the inverse of said voltage pulses to the gate of said third transistor; (c) and detecting the voltage on the gates of said first and second transistors and preventing the gate of said third transistor from rising to a value which would turn on said third transistor unless said voltage on the gate of said first and second transistors is substantially zero. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A synchronous rectifier circuit comprising:
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(a) a transformer having a primary winding and a secondary winding; (b) at least first, second and third power MOS transistors, each having a source-to-drain path and a gate; (c) a power supply device; (d) a load circuit having a series inductor; (e) said primary winding of said transformer being connected in series with said source-to-drain path of said first power MOS transistor and said power supply device; (f) said secondary winding of said transformer being connected in series with said source-to-drain path of said second power MOS transistor and said load circuit, said gates of said first and second power MOS transistors being connected together at a control node; (g) said source-to-drain path of said third power MOS transistor being connected across said load circuit; (h) a drive pulse generator circuit having an input coupled to said load circuit to detect voltage in said load circuit and having an output in the form of repetitive pulses of variable width, said output being coupled to said control node and said output being inverted and coupled to said gate of said third power MOS transistor; (i) and detecting means responsive to said control node being at a positive voltage which would activate said gates of said first and second power MOS transistors, said detecting means connected to prevent said gate of said third power MOS transistor from being at a positive voltage which would activate said third power MOS transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A synchronous rectifier circuit comprising:
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(a) a transformer having a primary winding and a secondary winding; (b) at least first, second and third power MOS transistors, each having a source-to-drain path and a gate; (c) a power supply device; (d) a load circuit having a series inductor; (e) said primary winding of said transformer being connected in series with said source-to-drain path of said first power MOS transistor and said power supply device; (f) said secondary winding of said transformer being connected in series with said source-to-drain path of said second power MOS transistor and said load circuit; (g) said source-to-drain path of said third power MOS transistor being connected across said load circuit; (h) a drive pulse generator circuit having an input circuit connected to said load circuit to detect voltage in said load circuit and having an output in the form of repetitive pulses of variable duty cycle, said output being coupled to a first control node and said output being inverted and coupled to a second control node; (i) a first control means responsive to said first control node which provides a turn-on level to said gates of said first and second power MOS transistors after providing and sensing a turn-off level to said gate of said third power MOS transistor; (j) and a second control means responsive to said second control node which provides a turn-on level to said gate of said third power MOS transistor after providing and sensing a turn-off level to said gates of said first and second power MOS transistors. - View Dependent Claims (19, 20)
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Specification