X-ray beamsplitter

• US 4,870,648 A
• Filed: 08/07/1987
• Issued: 09/26/1989
• Est. Priority Date: 08/07/1987
• Status: Expired due to Term

• Current Assignee: United States Of America As Represented By The Department Of Energy
• Original Assignee: United States Department of Energy
• Inventors: Stearns, Daniel S., Hawryluk, Andrew M., Ceglio, Natale M., Barbee, Troy W. Jr.
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Vo, Xuan Thi
• Application Number:
  US07/082,468
• Time in Patent Office: 781 Days
• Field of Search: 372/99, 372/195, 372/96, 372/103, 372/98, 372/108, 378/145, 378/161
• US Class Current: 372/5
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure
• CPC Class Codes: G21K 2201/061 characterised by a multilayer structure
• CPC Class Codes: G21K 2201/067 Construction details
• CPC Class Codes: H01S 4/00 Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Abstract

An x-ray beamsplitter which splits an x-ray beam into two coherent parts by reflecting and transmitting some fraction of an incident beam has applications for x-ray interferometry, x-ray holography, x-ray beam manipulation, and x-ray laser cavity output couplers. The beamsplitter is formed of a wavelength selective multilayer thin film supported by a very thin x-ray transparent membrane. The beamsplitter resonantly transmits and reflects x-rays through thin film interference effects. A thin film is formed of 5-50 pairs of alternate Mo/Si layers with a period of 20-250 A. The support membrane is 10-200 nm of silicon nitride or boron nitride. The multilayer/support membrane structure is formed across a window in a substrate by first forming the structure on a solid substrate and then forming a window in the substrate to leave a free-standing structure over the window.

Claims

1. An X-ray beamsplitter comprising:

a substrate having a window therethrough;

a very thin substantially flat X-ray transparent support membrane deposited on the substrate and extending across the window therein;

a thin multilayer film deposited on the membrane and over the window in the substrate which resonantly reflects, and transmits X-rays of wavelength λ

incident at an angle of θ and

has a periodicity d given by

space="preserve" listing-type="equation">λ

=2 μ

d sin θ

where θ

is the angle of incidence measured from the surface of the beamsplitter and μ

is a predetermined factor which accounts for refractive effects in the multilayer film.

2. The beamsplitter of claim 1 wherein the thickness of the support membrane is substantially less than the thickness of the multilayer film.

3. The beamsplitter of claim 1 wherein the support membrane is formed of silicon nitride, boron nitride, or silicon.

4. The beamsplitter of claim 1 wherein the support membrane has a thickness of about 10 nm to 200 nm.

5. The beamsplitter of claim 1 wherein the substrate is a silicon wafer or glass.

6. The beamsplitter of claim 1 for X-ray wavelengths in the range of about 1 nm to about 50 nm wherein the multilayer film comprises about 5 to 50 layer pairs of molybdenum and silicon multilayers.

7. The beamsplitter of claim 6 wherein the periodicity of the multilayers is about 20 A to about 250 A.

8. The beamsplitter of claim 3 wherein the support membrane has a thickness of about 10 nm to 200 nm.

9. The beamsplitter of claim 1 wherein the window in the substrate has an area between about 5 to 35 mm².

10. A method for fabricating an X-ray beamsplitter comprising:

preparing a substrate having front and back sides;

depositing an etch stop layer formed of a thin layer of X-ray transparent material on the front and back sides of the substrate;

depositing a thin multiplayer film of periodic alternating layers on the layer of X-ray transparent material on the front side of the substrate which resonantly reflects, and transmits X-rays of wavelength λ

incident at an angle θ

;

patterning the layer of X-ray transparent material on the back side of the substrate and removing the layer from a small area to expose the substrate;

etching the exposed substrate from the back side to the etch stop layer on the front side.

11. The method of claim 10 further comprising forming the etch stop layer of silicon nitride or boron nitride.

12. The method of claim 11 further comprising forming the etch stop layer of a thickness of about 10-200 nm.

13. The method of claim 10 further comprising forming a thin multilayer film which resonantIy reflects, and transmits X-rays of wavelength λ

incident at an angle θ and

has a periodicity d given by λ

=2 μ

d sin θ

where θ

is the angle of incidence measured from the surface of the beamsplitter and μ

is a predetermined factor which accounts for refractive effects in the multilayer film.

14. The method of claim 13 for X-ray wavelengths in the range of about 1 nm to 50 nm further comprising forming the multilayer film of about 5 to 50 layer pairs of molybdenum and silicon.

15. The method of claim 14 further comprising forming the layer pairs with a periodicity of about 20 A to 250 A.

16. A method for fabricating an X-ray beamsplitter comprising:

depositing a thin layer of X-ray transparent material on a front surface of a substrate;

depositing a thin multiplayer film of periodic alternating layers on the layer of X-ray transparent material which resonantly reflects, and transmits X-rays of wavelength λ

incident at an angle θ

;

etching the substrate from a back surface to the layer of X-ray transparent material on the front surface to form a window through the substrate over which the layer of X-ray transparent material and thin multilayer film extent.

17. The method of claim 16 further comprising forming the layer of X-ray transparent material from silicon nitride or boron nitride.

18. The method of claim 17 further comprising forming the layer of a thickness of about 10-200 nm.

19. The method of claim 16 further comprising forming a thin multilayer film which resonantly reflects, and transmits X-rays of wavelength λ

incident at an angle θ and

has a periodicity d given by

space="preserve" listing-type="equation">λ

=2 μ

d sin θ

where θ

is the angle of incidence measured from the surface of the beamsplitter and μ

is a predetermined factor which accounts for refractive effects in the multilayer film.

20. A method for fabricating an X-ray beamsplitter, comprising:

forming thin substantially flat X-ray transparent supporting membrane;

forming a thin multilayer film on the membrane which resonantly reflects, and transmits X-rays of wavelength λ

incident at an angle θ and

has a periodicity d given by

space="preserve" listing-type="equation">λ

=2 μ

d sin θ

where θ

is the angle of incidence measured from the surface of the beamsplitter and μ

is a predetermined factor which accounts for refractive effects in the multilayer film.

21. A resonant cavity for supporting X-ray laser action, comprising:

a multilayer thin film rear cavity X-ray mirror;

an X-ray beamsplitter spaced from and aligned with the rear cavity mirror along a cavity axis, the beamsplitter comprising;

a substrate having a window therethrough;

a very thin substantially flat X-ray transparent support membrane deposited on the substrate and extending across the window therein;

a thin multilayer film deposited on the membrane and over the window in the substrate which resonantly reflects and transmits X-rays of wavelength λ

incident at an angel θ and

has a periodicity d given by

space="preserve" listing-type="equation">λ

=2 μ

d sin θ

where θ

is the angle of incidence measured from the surface of the beamsplitter and λ

is a predetermined factor which accounts for refractive effects in the multilayer film; and

a gain media positioned between the rear cavity X-ray mirror and the X-ray beamsplitter along said axis.

22. The resonant cavity of claim 21 wherein the gain media comprises means for generating a plasma in the cavity which emits and amplifies X-rays of said wavelength along said axis.

23. The resonant cavity of claim 22 wherein the plasma generating means is an exploding foil amplifier.

24. The resonant cavity of claim 21 wherein the support membrane is formed of silicon nitride or boron nitride having a thickness of about 300 A to 500 A.

25. The resonant cavity of claim 22 for X-ray wavelengths in the range of about 1 nm to about 50 nm wherein the multilayer film comprises about 5 to 50 layer pairs of molybdenum and silicon multilayers having a periodicity of the multilayers of about 20 A to about 250 A.