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Integrated Schottky diode and transistor

  • US 4,871,686 A
  • Filed: 03/28/1988
  • Issued: 10/03/1989
  • Est. Priority Date: 03/28/1988
  • Status: Expired due to Term
First Claim
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1. A process for forming a semiconductor device having an integral Schottky diode, comprising:

  • providing a semiconductor substrate of a first type and first impurity concentration and having a principal surface;

    providing a first doped region of a second type opposite the first type and of a second impurity concentration and which forms a first junction with the substrate extending to the surface;

    providing a second doped region of the first type and a third impurity concentration in the first region and which forms a second junction with the first region extending to the surface;

    then in either order, (a) providing a third doped region of the second type and a fourth impurity concentration located at the intersection of the first junction and the surface and a fourth doped region of the second type and a fifth impurity concentration laterally within the second region at the surface, and (b) providing a fifth doped region of the first type and a sixth impurity concentration located at the intersection of the second junction and the surface;

    exposing first, second and third portions of the surface, respectively, on the third, fourth and fifth doped regions and a fourth portion of the surface laterally within the second region adjacent to the second portion of the surface; and

    providing a Schottky contact to the fourth portion of the surface and ohmic contact to the second portion of the surface.

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