Force measurement sensor integrated on silicon, and a method of manufacture

• US 4,873,868 A
• Filed: 02/09/1988
• Issued: 10/17/1989
• Est. Priority Date: 06/10/1986
• Status: Expired due to Fees

• Current Assignee: Societe Anonyme Metravid RDS
• Original Assignee: Metravib R.D.S.
• Inventors: Permuy, Alfred, Pirot, Francois-Xavier, Spirkovitch, Serge, Pierre, Andre, Brosselard, Jean-Pierre, Batllteu, Francois
• Primary Examiner(s): Chapman, John
• Assistant Examiner(s): Bell, Robert P.
• Application Number:
  US07/162,329
• Time in Patent Office: 616 Days
• Field of Search: 73/517 R, 73/651, 73/862.68, 361/283
• US Class Current: 73/862.642
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0005 Anti-stiction coatings
• CPC Class Codes: B81C 2201/112 Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
• CPC Class Codes: G01D 5/2417 by varying separation
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

A mechanical magnitude sensor integrated on silicon, and a method of manufacture. The sensor comprises a bendably deformable conductive blade (4) whose free end (43) constitutes the first plate of a variable capacitor whose fixed second plate (24) is constituted by a conductive zone formed on the silicon substrate. A JFET type structure is formed in the vicinity of the anchor point (41) of the blade (4) with a gate zone (21) situated beneath the anchor portion (41) and with drain and source zones (22, 23) being provided on either side of the gate zone (21) in order to amplify a signal representative of variations in the position of the flexible blade (4). The sensor may be used as an accelerometer or as a pressure sensor.

Claims

1. A force measurement sensor integrated on silicon, comprising:

a mono-crystalline silicon substrate having a first dopant and covered on at least a portion of its surface by a doped layer having a second dopant;

a variable capacitor comprising a first moving plate including a flexible conducting blade having a free end which is deformable by bending, said plate having an "anchor portion applied to a localized zone of said doped layer, and which is mounted so as to have a cantilevered portion including a set of staircase steps, each staircase step being shorter than a critical sticking length and co-operating with a doped zone having a high concentration of impurities situated beneath said step and capable of being individually biased, and a fixed second plate including a conducting zone made on said doped layer, said conducting zone facing said first plate and separated therefrom by an empty space which is a few microns across;

a first doped zone which is doped with a high concentration of said first dopant and which is situated in said doped layer, the anchor portion being located on said first doped zone in order to constitute the gate of a junction field effect transistor (JFET);

second and third doped zones which are doped with a high concentration of said second dopant situated on either side of said first doped zone to constitute the drain and source zones of the JFET, the doped layer defining a zone having a low concentration of said second dopant situated beneath said first doped zone between said second and third doped zones in order to constitute the channel of said JFET whose gate is directly connected via the flexible blade to the moving plate of the variable capacitor; and

means for detecting a signal representative of variations in the position of said flexible blade.

2. A sensor according to claim 1, wherein means are provided for successively applying a bias voltage to each individually biasable doped zone going from zone to zone of the flexible blade starting with the free end thereof, thereby enabling successive steps to be unstuck in the event of the free portion of the flexible blade becoming accidentally stuck to the substrate.

3. A sensor according to claim 1 wherein said JFET forms a ring with said drain or source second zone constituting a central zone, said gate first zone surrounding the central drain or source zone in non-contiguous manner, said source or drain third zone itself surrounding the gate first zone in noncontiguous manner, said peripheral conductive zone being disposed in noncontiguous manner outside the source or drain third zone, and said channel zone being situated in the gaps between the second and first zones, between the first and third zones, and beneath said zones, and wherein the flexible blade has a cantilevered portion which extends radially outwardly from the first zone towards the conductive zone.

4. A sensor according to claim 3, further including a plurality of flexible blades extending radially outwardly from an anchor zone constituted by a ring superposed over the first zone, and conductive zones which are equal in number to the number of flexible blades and which are mutually noncontiguous with respective free end terminal portions of the flexible blades extending thereover.

5. A sensor according to claim 4, wherein the flexible blades are disposed symmetrically relative to two mutually perpendicular planes.

6. A sensor according to claim 1, wherein the blade has a widened portion at said free end of the conducting blade, said widened portion being suitable for having a load disposed thereon.

7. A sensor according to claim 1, wherein the flexible conducting blade is relatively long in comparison with its width and includes gaps in order to increase the ratio between its flexibility in the longitudinal direction and its flexibility in the transverse direction.