Optoelectric transducer

• US 4,875,084 A
• Filed: 03/28/1988
• Issued: 10/17/1989
• Est. Priority Date: 03/26/1987
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Tohyama, Shigeru
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Jackson, Jerome
• Application Number:
  US07/174,464
• Time in Patent Office: 568 Days
• Field of Search: 357/30, 357/33, 357/15, 357/89, 357/7, 357/58, 357/24
• US Class Current: 257/436
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14806 Structural or functional details thereof
• CPC Class Codes: Y10S 257/914 Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Abstract

For precise selection of a cut-off wavelength of an incident light, there is disclosed an optoelectric transducer operative to produce an electric charges on the basis of an incident light, comprising, (a) a carrier injected region with a first conductivity type formed of a non-degenerative semiconductor material and having a surface capable of being illuminated by the incident light, (b) a potential-barrier region, a first homojunction being formed between the carrier injected region and the potential-barrier region, and (c) a photoelectric converting region with the first conductivity type formed of a degenerative semiconductor material, a second homojunction being formed between the potential-barrier region and the photoelectric converting region, wherein a potential barrier is formed at the second homojunction between the potential-barrier region and the photoelectric converting region, so that it is possible to form the potential-barrier with a arbitrary height by selecting the two semiconductor materials for the potential-barrier region and the photoelectric converting region.

Claims

1. An optoelectric transducer operative to produce electric charges in the presence of incident light, comprising:

(a) a carrier injected region with a first conductivity type formed of a nondegeneratively doped semiconductor material;

(b) a potential-barrier region contiguous to said carrier injected region for producing a first homojunction and formed of a material selected from the group consisting of as first semiconductor material of said first conductivity type lower in impurity atom concentration than said carrier injected region, an intrinsic semiconductor material and a second semiconductor material of a second conductivity type opposite to said first conductivity type;

(c) a photoelectric converting region with said first conductivity type formed of a degeneratively doped semiconductor material and operative to produce hot majority carriers and hot minority carriers upon an illumination of said incident light, said hot majority carriers being injected into said carrier injected region, a second homojunction being formed between said potential-barrier region and said photoelectric converting region, said second semiconductor material having a thickness and an impurity atom concentration selected in such a manner as to be perfectly depleted due to depletion layers extending from said first and second homojunctions in at least an electric charge producing operation; and

(d) short-circuit means electrically interconnecting said photoelectric converting region and said potential-barrier region, in which a cut-off wavelength of said incident light is decided by a barrier height at said second homojunction, wherein said short-circuit means provides a potential barrier lower than that between said potential-barrier region and said photoelectric converting region with respect to minority carriers produced in the photoelectric converting region.

2. An optoelectric transducer as set forth in claim 1, in which said carrier injected region is formed of a p-type silicon material doped with p-type impurity atoms to have an impurity atom concentration of about 1×

10¹⁵ cm^-3.

3. An optoelectric transducer as set forth in claim 2, in which said potential-barrier region is formed of an n-type silicon material doped with n-type impurity atoms to have a peak impurity atom concentration ranging between 3×

10¹⁶ cm^-3 and 5×

10¹⁶ cm^-3, said n-type impurity atoms being distributed to have a profile tracing a half of a Gaussian distribution curve, wherein said potential-barrier region has a thickness ranging between 200 nano-meters and 300 nano-meters.

4. An optoelectric transducer as set forth in claim 3, in which said photoelectric converting region is formed of a p-type semiconductor material doped with p-type impurity atoms distributed to have a stepped profile with impurity atom concentrations from about 10¹⁸ cm^-3 to the uppermost solid solubility.

5. An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer further comprises an insulating layer formed on said photoelectric converting region and a mirror formed on said insulating layer, wherein said carrier injected region, said potential-barrier region, said photoelectric converting region, said insulating layer and said mirror forming in combination an optical cavity for an optical resonance.

6. An optoelectric transducer as set forth in claim 5, in which said insulating layer is formed of silicon oxide having a thickness of about 1 micron.

7. An optoelectric transducer as set forth in claim 6, in which said photoelectric converting region has a p-type impurity atom concentration of about 10²⁰ cm^-3 and a thickness ranging between 400 nano-meters and 500 nano-meters, wherein said insulating layer has a thickness ranging between 1.5 micron and 2.0 microns.

8. An optoelectric transducer as set forth in claim 5, in which said mirror is formed of aluminum.

9. An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer further comprises an anti-reflection film formed on the surface of said carrier injected region.

10. An optoelectric transducer as set forth in claim 1, in which said potential barrier-region and said photoelectric conversion region are surrounded by a guard ring region of said second conductivity type forming a part of said short-circuit means.

11. An optoelectric transducer as set forth in claim 10, in which said guard ring region has a heavily doped portion larger in impurity atom concentration than the other portion of the guard ring region.

12. An optoelectric transducer as set forth in claim 11, in which said heavily doped portion is contacted to a metal wiring layer operative to extract said electric charges, wherein said carrier injected region is coupled to a constant voltage source.

13. An optoelectric transducer as set forth in claim 1, in which a short circuit is provided for electrical coupling between said photoelectric converting region and said potential-barrier region.

14. An optoelectric transducer as set forth in claim 1, in which a multiple film structure having an upper potential-barrier region and an upper carrier injected region of said first conductivity type is provided between said photoelectric converting region and said insulating film.

15. An optoelectric transducer as set forth in claim 1, in which said optoelectric transducer services as a pixel incorporated in an image sensor.

16. An optoelectric transducer as set forth in claim 1, in which said carrier injected region is formed of an n-type silicon material.

17. An optoelectric transducer as set forth in claim 16, in which said photoelectric converting region is formed of an n-type degeneratively doped silicon material.

18. An optoelectric transducer as set forth in claim 17, in which said optoelectric transducer further comprises an insulating layer of silicon dioxide formed on said photoelectric converting region and a mirror formed on said insulating layer and in which said carrier injected region, said potential-barrier region, said photoelectric converting region, said insulating layer and said mirror forming in combination an optical cavity for an optical resonance, wherein said photoelectric converting region is doped with n-type impurity atoms of about 10²⁰ cm^-3 and has a thickness ranging between 400 nano-meters and 500 nanometers and said insulating layer has a thickness of about 1 micron.