Semiconductor memory with an improved nibble mode arrangement

• US 4,875,192 A
• Filed: 11/30/1987
• Issued: 10/17/1989
• Est. Priority Date: 12/23/1983
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Matsumoto, Tetsuro
• Primary Examiner(s): Hecker, Stuart N.
• Assistant Examiner(s): GOSSAGE, GLENN
• Application Number:
  US07/127,621
• Time in Patent Office: 687 Days
• Field of Search: 365/189, 365/190, 365/193, 365/203, 365/230, 365/233, 365/239, 365/240
• US Class Current: 365/193
• CPC Class Codes: G11C 11/4076 Timing circuits for regeneration management G11C11/406
• CPC Class Codes: G11C 11/4093 Input/output [I/O] data interface arrangements, e.g. data buffers
• CPC Class Codes: G11C 11/4096 Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches

Abstract

A dynamic semiconductor memory includes a shift register which enables a nibble operation to be carried out, and a timing generator. The timing generator detects every transient state of the column address strobe signals to form shift pulses that are to be supplied to said shift register, as well as timing signals that are to be supplied to various internal circuits. The dynamic semiconductor memory having such a timing generator operates at high speeds, since it is accessed by the cycle number with a small change of the column address strobe signals.

Claims

1. A semiconductor memory comprising:

a plurality a memory arrays each of which includes a plurality of dynamic memory cells;

a plurality of read circuits coupled respectively to said memory arrays;

a timing generator which detects every change in a column address strobe signal applied to said semiconductor memory, wherein said timing generator includes means to form timing signals in response to said detected changes; and

a control circuit which, upon receipt of said timing signals, produces control signals to successively operate said plurality of read circuits so that said semiconductor memory successively produces output data in synchronism with every change in said column address strobe signal in read operation.

2. A semiconductor memory according to claim 1, wherein said control circuit is comprised of a shift register which receives said timing signals as shift pulses.

3. A semiconductor memory according to claim 1, wherein the dynamic memory cells included in each of said memory arrays are arranged in the form of a matrix, wherein each of said memory arrays further includes a plurality of word lines connected to select terminals of each of the dynamic memory cells, and a plurality of data lines connected to data input/output terminals of each of the dynamic cells for connecting said dynamic cells to said read circuits.

4. A semiconductor memory according to claim 3, wherein output terminals of said plurality of read circuits are commonly connected to each other.

5. A semiconductor memory according to claim 4, wherein said semiconductor memory further comprises a plurality of write circuits coupled to said memory arrays, said plurality of write circuits being successively operated by the control signals produced by said shift register.

6. A semiconductor memory comprising:

a plurality of memory arrays each of which includes a plurality of dynamic memory cells;

a plurality of read circuits coupled, respectively, to said memory arrays so that each memory array is coupled to a predetermined read circuit; and

a timing generator for producing a plurality of control signals to successively operate said plurality of read circuits comprising;

a shift register having a plurality of successive stages coupled, respectively, to said plurality of read circuits,

a signal generator circuit coupled to said shift register for generating a plurality of shift signals to said shift register in response to detecting every change in a column address strobe signal applied to said semiconductor memory,

wherein said shift signals operate said shift register to shift stages to successively operate said plurality of read circuits respectively coupled to said plurality of shift register stages in synchronism with every change in said column address strobe signal in read operation.

7. A semiconductor memory according to claim 6, further comprising means coupled to said shift register for setting an initial address into said shift register to select a predetermined one of said plurality of read circuits as the first read circuit to be operated when said signal generating circuit first detects said changes of said column address strobe signal.

8. A dynamic memory receiving first address signals in response to a predetermined change in a row address strobe signal and second address signals in response to a predetermined change in a column address strobe signal, said dynamic memory comprising:

a plurality of memory arrays;

a plurality of read circuits coupled, respectively, to said memory arrays so that each memory array is coupled to a predetermined read circuit;

an output terminal coupled to receive output data read out from said plurality of memory arrays by said plurality of read circuits;

a timing generator which detects every change in said column address strobe signal, wherein said timing generator includes means to form timing signals in response to said detected changes; and

control means responsive to said timing signals for producing control signals to successively operate said plurality of read circuits so that said dynamic memory successively produces output data in synchronism with every change in said column address strobe signal in read operation.

9. A dynamic memory according to claim 8, wherein each of said memory arrays is comprised of a plurality of dynamic memory cells arranged in the form of a matrix having memory cell rows and memory cell columns, a plurality of word lines each of which is formed along one of said memory cell rows and is connected to select terminals of the memory cells formed on one of said memory cell rows, and a plurality of data lines each of which is formed along one of said memory cell columns and is connected to data input/output terminals of predetermined ones of the memory cells formed on one of said memory cell columns and is connected to the read circuit corresponding to the memory array in which it is located.

10. A dynamic memory according to claim 9, further comprising selector means coupled to said word lines for selecting one of said word lines.

11. A dynamic memory receiving first address signals in response to a predetermined change in a row address strobe signal and second address signals in response to a predetermined change in a column address strobe signal, said dynamic memory comprising:

mode determining means responsive to said row and column address strobe signals for determining a mode in said dynamic memory;

a plurality of memory arrays;

a plurality of read circuits coupled, respectively, to said memory arrays so that each memory array is coupled to a predetermined read circuit;

an output terminal coupled to receive output data read out from said plurality of memory arrays by said plurality of read circuits;

a timing generator which detects every change in said column address strobe signal and which forms timing signals in response to the detected changes, when said mode determining means indicates a predetermined mode; and

control means responsive to said timing signals for producing control signals to successively operate said plurality of read circuits so that said dynamic memory successively produces output data in synchronism with every change in said column address strobe signal in read operation.

12. A dynamic memory according to claim 11, wherein each of said memory arrays is comprised of a plurality of dynamic memory cells arranged in the form of a matrix having memory cell rows and memory cell columns, a plurality of word lines each of which is formed along one of said memory cell rows and is connected to select terminals of the memory cells formed on one of said memory cell rows, and a plurality of data lines each of which is formed along one of said memory cell columns and is connected to data input/output terminals of predetermined ones of the memory cells formed on one of said memory cell columns and is connected to the read circuit corresponding to the memory array in which it is located.

13. A dynamic memory according to claim 12, further comprising selector means coupled to said word lines for selecting one of said word lines.

14. A dynamic memory according to claim 13, wherein said control means comprises a shift register which receives said timing signals as shift pluses.

15. A dynamic memory according to claim 14, further comprising a plurality of write circuits coupled to said memory arrays, said write circuits being successively operated by the control signals produced by said shift register.