IC with recombination layer and guard ring separating VDMOS and CMOS or the like

• US 4,881,112 A
• Filed: 05/20/1988
• Issued: 11/14/1989
• Est. Priority Date: 05/29/1987
• Status: Expired due to Term

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Matsushita, Tsutomu
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Soltz, David
• Application Number:
  US07/196,714
• Time in Patent Office: 543 Days
• Field of Search: 357/52, 357/47, 357/48, 357/23.4, 357/43, 437/12
• US Class Current: 257/338
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/74 Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
• CPC Class Codes: H01L 21/761 PN junctions
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors

Abstract

In an integrated circuit device having a highly doped bottom substrate layer of a first conductivity type, a lightly doped top layer of the first conductivity type formed on the substrate layer, a vertical MOSFET formed in the lightly doped top layer and a second circuit component, such as a CMOS, formed in the lightly doped top layer, there are further provided a guard ring and a recombination layer for preventing latchup of the second component by preventing minority carriers from moving from the vertical MOSFET to the second component. The guard ring is formed in the lightly doped top layer between the vertical MOSFET and the second component, and made of a second conductivity type single crystal semiconductor, or a first conductivity type polycrystalline silicon or an insulating material such as SiO₂. The recombination layer is formed between the bottom substrate layer and the lightly doped top layer so as to separate at least the second component from the bottom substrate layer, and made of the first conductivity type polycrystalline silicon.

Claims

1. A semiconductor device comprising:

a highly doped lower layer of a first conductivity type, formed in a substrate body,

a lightly doped upper layer of said first conductivity type, formed above said highly doped lower layer within said body,

a vertical MOSFET formed in a first portion of said lightly doped upper layer so that said lightly doped layer is used as a substantial drain region of said vertical MOSFET,

a second circuit component formed in a second portion of said lightly doped upper layer,

a guard ring formed in said lightly doped upper layer so as to separate said first and second portions, and

a recombination layer for facilitating recombination of minority carriers, said recombination layer being formed between said highly doped lower layer and at least said second portion of said lightly doped upper layer, said guard ring reaching said recombination layer.

2. A semiconductor device according to claim 1 wherein said recombination layer is made of a material capable of promoting the recombination of carriers.

3. A semiconductor device according to claim 2 wherein said recombination layer is a polycrystalline silicon layer.

4. A semiconductor device according to claim 3 wherein said polycrystalline silicon layer is doped with an impurity of said first conductivity type.

5. A semiconductor device according to claim 1 wherein said recombination layer is formed on said highly doped lower layer, and said first and second portions of said lightly doped upper layer and said guard ring are formed on said recombination layer.

6. A semiconductor device according to claim 1 wherein said recombination layer is formed on said highly doped lower layer, and said second portion and said guard ring are formed on said recombination layer while said first portion of said lightly doped layer is formed directly on said highly doped lower layer.

7. A semiconductor device according to claim 1 wherein said guard ring is a semiconductor region of said second conductivity type, formed in said lightly doped upper layer.

8. A semiconductor device according to claim 1 wherein said guard ring is made of an insulating material.

9. A semiconductor device according to claim 8 wherein said guard ring is made of silicon dioxide.

10. A semiconductor device according to claim 1 wherein said guard ring is a polycrystalline silicon region of said first conductivity type.

11. A semiconductor device according to claim 1, wherein said substrate body has a lower surface bordering said lower layer, and an upper surface bordering said upper layer, said recombination layer being positioned between said upper and lower surfaces of said substrate body, and extends substantially in parallel to said upper and lower surfaces thereof.

12. A semiconductor device according to claim 11, wherein said vertical MOSFET comprises a channel region of a second conductivity type opposite to said first conductivity type, and a source region of said first conductivity type, said channel region extending from said upper surface of said substrate body into said upper layer, said source region extending from said upper surface into said channel region, said recombination layer being deeper within said upper surface of said substrate body than said channel region, so that said channel region does not reach said recombination layer.

13. A semiconductor device according to claim 11, wherein said second circuit component is a CMOS comprising a first pair of source and drain regions of said second conductivity type which both extend from said upper surface of said substrate body into said upper layer, and a second pair of source and drain regions of said first conductivity type which both extend from said upper surface of said substrate body into a wall region of said second conductivity type which extends from said upper surface of said substrate body into said upper layer, wherein said recombination layer is deeper within said upper surface of said substrate body than said well region, so that said wall region is separated from said recombination layer by said upper layer.

14. A semiconductor device according to claim 11, wherein said guard ring extends vertically from said upper surface of said substrate body into said upper layer.

15. A semiconductor device according to claim 1, wherein said recombination layer is a layer having a crystal lattice structure which is more imperfect than either of said upper and lower layers.

16. A semiconductor device according to claim 15, wherein said first layer is formed in a single crystal, and said lower layer is formed in another single crystal.

17. A semiconductor device according to claim 15, wherein said recombination layer is interposed between said upper and lower layers by bonding a first semiconductor wafer comprising said upper layer and a second semiconductor wafer comprising said lower layer.

18. A semiconductor device according to claim 11, wherein said vertical MOSFET comprises a bottom drain electrode formed on said lower surface of said substrate body, a topside source electrode formed on said upper surface of said substrate body, and an insulated gate electrode formed above said upper surface.