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IC with recombination layer and guard ring separating VDMOS and CMOS or the like

  • US 4,881,112 A
  • Filed: 05/20/1988
  • Issued: 11/14/1989
  • Est. Priority Date: 05/29/1987
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a highly doped lower layer of a first conductivity type, formed in a substrate body,a lightly doped upper layer of said first conductivity type, formed above said highly doped lower layer within said body,a vertical MOSFET formed in a first portion of said lightly doped upper layer so that said lightly doped layer is used as a substantial drain region of said vertical MOSFET,a second circuit component formed in a second portion of said lightly doped upper layer,a guard ring formed in said lightly doped upper layer so as to separate said first and second portions, anda recombination layer for facilitating recombination of minority carriers, said recombination layer being formed between said highly doped lower layer and at least said second portion of said lightly doped upper layer, said guard ring reaching said recombination layer.

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