Integrated multiple quantum well photonic and electronic devices

• US 4,884,119 A
• Filed: 04/22/1988
• Issued: 11/28/1989
• Est. Priority Date: 04/22/1988
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.), Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: American Telephone & Telegraph Company (AT&T, Inc.), AT&T, Inc.
• Inventors: Miller, David A. B.
• Primary Examiner(s): Mintel, William A.
• Application Number:
  US07/184,747
• Time in Patent Office: 585 Days
• Field of Search: 357/4, 357/19, 357/30 B, 357/30 E, 357/30 C, 357/30 I, 357/30 P, 357/30 H, 357/30 D, 357/30 G, 357/58, 357/16, 357/22, 357/40, 357/41, 357/22 A, 357/22 MD
• US Class Current: 257/14
• CPC Class Codes: G02F 3/028 based on self electro-optic effect devices [SEED]
• CPC Class Codes: H01L 27/144 Devices controlled by radiation

Abstract

In an optoelectronic integrated circuit, an electronic device is integrated with an optical device by fabricating the electronic device directly in a doped semiconductor layer of the optical device. The optical devices contemplated for use include at least a region of multiple low-doped or intrinsic quantum well layers; electronic devices include bipolar and field-effect transistors. Resulting integrated circuits exhibit a high degree of planarity.

Claims

1. An optoelectronic integrated circuit comprising an optical device and an electronic device said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, and said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device and said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device.

2. The optoelectronic integrated circuit as defined in claim 1 wherein said intrinsic region includes at least one quantum well region.

3. The optoelectronic integrated circuit as defined in claim 2 wherein said electronic device includes first, second and third regions confined to said first doped semiconductor layer, and means for applying an electrical signal to each of said first, second and third regions.

4. The optoelectronic integrated device defined in claim 2 wherein said first and second doped semiconductor layers and said intrinsic region consist of compositions selected from Group III-V compounds.

5. An optoelectronic integrated circuit comprising an optical device and an electronic device, said optical device including a first doped semiconductor layer, a second doped semiconductor layer, a conductivity type for said first doped semiconductor layer being opposite to the conductivity type for said second doped semiconductor layer, and an intrinsic region interposed between said first and second doped semiconductor layers, said electronic device including at least first and second doped semiconductor regions confined to said first doped semiconductor layer, said electronic device adjacent to said optical device, said first doped semiconductor layer being electrically continuous over a region substantially including both said electronic device and said optical device, and said electronic device for controlling operation of said optical device.

6. The optoelectronic integrated circuit as defined in claim 5 wherein said intrinsic region includes at least one quantum well region.

7. The optoelectronic integrated circuit as defined in claim 6 wherein said electronic device includes first, second and third regions confined to said first doped semiconductor layer, and means for applying an electrical signal to each of said first, second and third regions.

8. The optoelectronic integrated circuit defined in claim 6 wherein said first and second doped semiconductor layers and said intrinsic region consist of compositions selected from Group III-V compounds.