Contact plug and interconnect employing a barrier lining and a backfilled conductor material

• US 4,884,123 A
• Filed: 02/19/1987
• Issued: 11/28/1989
• Est. Priority Date: 02/19/1987
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Klein, Richard K., Sander, Craig S., Sliwa, Jack, Dixit, Pankaj, Farnaam, Mohammad
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): JACKSON JR, JEROME
• Application Number:
  US07/016,429
• Time in Patent Office: 1,013 Days
• Field of Search: 437/192, 437/190, 437/193, 437/194, 357/67, 357/71
• US Class Current: 257/751
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region

Abstract

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion and contacting layer (18) of titanium formed along the walls of the insulating layer and in contact with the portion of the doped region; (b) a barrier layer (20) formed over the adhesion and contacting layer; and (c) a conductive material (22) formed over the barrier layer and at least substantially filling said contact hole. A patterned metal layer (26) forms an ohmic contact interconnect to other devices and external circuitry. The adhesion and contacting layer and barrier layer are either physically or chemically vapor deposited onto the oxide surface. The conductive layer comprises one of CVD or bias sputtered tungsten, molybdenum or in situ doped CVD polysilicon. The contact of the invention avoids the problems of encroachment at the oxide-silicon interface and worm holes associated with other contact schemes but retains process simplicity.

Claims

1. A low resistance contact plug, stable in the presence of aluminum, formed in a contact hole less than about μ

m² in area through at least one insulating layer formed on a semiconductor surface to at least a portion of a doped region in said semiconductor surface, said contact comprising;

(a) an adhesion and contacting layer of titaniun about 100-800Å

thick formed at least along the walls of said contact hole through said at least one insulating layer and in contact with said portion of said doped region;

(b) a barrier layer formed over said adhesion and contacting layer; and

(c) a conductive material formed over said barrier layer and at least substantially filling said contact hole; and

a patterned interconnect electrically and physically contacting said plug.

2. The contact of claim 1 wherein said barrier layer comprises a material selected from the group consisting of tungsten, molybdenum, titanium-tungsten, titanium nitride, titanium tungsten nitride, tungsten nitride, molybdenum nitride, chromium, chromium-chromium oxide, and boron nitride.

3. The contact of claim 2 wherein said barrier layer comprises a material selected from the group consisting of titanium nitride, titanium-tungsten, titanium tungsten nitride, and boron nitride.

4. The contact of claim 3 wherein said barrier layer consists essentially of titanium nitride.

5. The contact of claim 1 wherein said barrier layer has a thickness of about 250 to 2,000 Å

.

6. The contact of claim 1 wherein said conductive material is selected from the group consisting of tungsten, molybdenum and doped polysilicon.

7. The contact of claim 6 wherein said tungsten conductive material is situated on an additional CVD tungsten silicide layer formed on said barrier layer.

8. The contact of claim 1 wherein said adhesion and contacting and said barrier layers cover all of said doped regions and most of said side walls and wherein said conductive material substantially fills said contact hole and is contained therein.

9. The contact of claim 1 wherein said interconnect comprises a material selected from the group consisting of aluminum alloy and tungsten.

10. A low resistance contact plug, stable in the presence of aluminum, formed in a contact hole less than about 2 μ

m² in area through at least one insulating layer formed on a semiconductor surface to at least a portion of a doped region in said semiconductor surface, said contact comprising;

(a) an adhesion and contacting layer of titanium about 100-800 Å

thick formed at least along the walls of said contact hole through said at least one insulating layer and in contact with said portion of said doped region;

(b) a barrier layer comprising a material selected from the group consisting of titanium nitride, titanium-tungsten, titanium tungsten nitride, and boron nitride formed over said adhesion and contacting layer; and

(c) a conductive material formed over said barrier layer and at least substantially filling said contact hole; and

a patterned interconnect electrically and physically contacting said plug.

11. The contact of claim 10 wherein said barrier layer consists essentially of titanium nitride.

12. The contact of claim 11 wherein said titanium nitride barrier layer comprises sputtered TiN having a thickness of about 250 to 2,000 Å

.

13. The contact of claim 10 wherein said adhesion and contacting and said barrier layers cover all of said doped regions and most of said side walls and wherein said conductive material substantially fills said contact hole and is contained therein.

14. The contact of claim 10 wherein said interconnect comprises a material selected from the group consisting of aluminum alloy and tungsten.

15. A low resistance contact plug, stable in the presence of aluminum, formed in a contact hole less than about 2 μ

m² in area through a layer of silicon dioxide formed on a silicon surface to at least a portion of a doped region in said silicon surface, said contact comprising;

(a) an adhesion and contacting layer of sputtered titanium about 100-800 Å

thick formed at least along the walls of said contact hole through said silicon dioxide and in contact with said portion of said doped region;

(b) a barrier layer of sputtered titanium nitride formed over said adhesion and contacting layer; and

(c) a CVD conductive material selected from the group consisting of tungsten and in situ doped polysilicon formed over said barrier layer and at least substantially filling said contact hole; and

a patterned interconnect electrically and physically contacting said plug.

16. The contact of claim 15 wherein said titanium nitride barrier layer has a thickness of about 250 to 2,000 Å

.

17. The contact of claim 15 wherein said adhesion and contacting and said barrier layers cover all of said doped regions and most of said side walls and wherein said conductive material substantially fills said contact hole and is contained therein.

18. The contact of claim 15 wherein said interconnect comprises a material selected from the group consisting of aluminum alloy and tungsten.