Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %

• US 4,888,062 A
• Filed: 08/26/1988
• Issued: 12/19/1989
• Est. Priority Date: 08/31/1987
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakai, Akira, Murakami, Tsutomu, Kanai, Masahiro, Nakagawa, Katsumi, Ishihara, Shunichi, Fujioka, Yasushi, Arao, Kozo
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/236,792
• Time in Patent Office: 480 Days
• Field of Search: 136/258 PC, 136/258 AM, 136/260, 136/264, 136/265, 357/30 B, 357/30 E, 357/30 J, 357/30 K, 357/16, 357/61, 357/63, 357/59 D, 357/58
• US Class Current: 136/258
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/02963 characterised by the doping material
• CPC Class Codes: H01L 31/02966 including ternary compounds, e.g. HgCdTe
• CPC Class Codes: H01L 31/077 the devices comprising monocrystalline or polycrystalline materials
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe_1-x Te_x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7.

The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.

Claims

1. An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms and hydrogen atoms, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.

2. The pin junction voltaic element according to claim 1, wherein said p-type semiconductor layer or/and said n-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, hydrogen atoms, and a dopant of p-type or n-type, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 86 vol % per unit volume.

3. The pin junction photovoltaic element according to claim 2, wherein said p-type dopant is a member selected from the group consisting of Group I elements and Group V elements of the Periodic Table.

4. The pin junction photovoltaic element according to claim 3, wherein said member is lithium.

5. An improved pin junction photovoltaic element which generates photoelectromotive force upon irradiation of light, having a junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, tellurium atoms and hydrogen atoms the quantitative ratio of said selenium atoms to said tellurium atoms in said deposited film is in the range from 1:

9 to 3;

7 said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.

6. The pin junction photovoltaic element according to claim 5, wherein said p-type semiconductor layer or/and said n-type semiconductor layer comprises a deposited film comprised of zinc atoms, selenium atoms, tellurium atoms, hydrogen atoms, and a dopant of p-type or n-type, the quantitative ratio of said selenium atoms to said tellurium atoms in said deposited film is in the range from 1:

9 to 3;

7, said deposited film containing said hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume.

7. The pin junction photovoltaic element according to claim 6, wherein said p-type dopant is a member selected from the group consisting of Group I elements and Group V elements of the Periodic Table.

8. The pin junction photovoltaic element according to claim 7, wherein said member is lithium.