Submerged wall isolation of silicon islands

• US 4,888,300 A
• Filed: 11/07/1985
• Issued: 12/19/1989
• Est. Priority Date: 11/07/1985
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: Fairchild Camera and Instrument Corporation
• Inventors: Burton, Gregory N.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Bunch, William D.
• Application Number:
  US06/796,041
• Time in Patent Office: 1,503 Days
• Field of Search: 29/576 E, 29/516 W, 29/580, 148/187, 148/DIG. 50, 148/51, 148/81, 148/86, 148/116, 148/117, 148/122, 148/125, 148/135, 156/633, 156/644, 156/647, 156/657, 156/628, 357/49, 357/59, 357/55, 357/26, 357/88, 437/61, 437/62, 437/67, 437/79, 437/233, 437/239, 437/985
• US Class Current: 438/404
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76281 Lateral isolation by selective oxidation of silicon
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence
• CPC Class Codes: Y10S 148/05 Etch and refill
• CPC Class Codes: Y10S 148/116 Oxidation, differential

Abstract

To completely isolate an island of silicon, a trench is cut into an epitaxial layer to provide access to a differently doped buried layer. While suspending the portion of the epitaxial layer surrounded by the trench by means of an oxide bridge, the underlying region of the buried layer is etched away to form a cavity under the active area. This cavity, as well as the surrounding trench, is then filled with a suitable insulating material to isolate the active island from the substrate.

Claims

1. A method for completely isolating a silicon island from its support substrate, comprising the steps of:

growing an epitaxial layer of single-crystalline silicon on a silicon substrate;

etching material around the border of a desired region of the epitaxial layer and beneath the desired region at the interface of the epitaxial layer and the substrate to form a cavity which completely separates the desired region from the substrate;

supporting the desired region of the epitaxial layer in place while etching the material beneath said region; and

introducing an insulating material into said cavity to provide an island of the epitaxial layer which is dielectrically isolated from the substrate.

2. The method of claim 1 wherein the desired region of the epitaxial layer is supported in place during the etching of the material beneath said region by means of a layer which bridges said border.

3. The method of claim 1 wherein a wet etch is employed during at least a portion of said etching step.

4. The method of claim 1 wherein said introducing step includes lining the walls of the cavity with said insulating material.

5. A method for isolating a semiconductor island from a surrounding substrate, comprising the steps of:

providing a buried region in the substrate, said buried region having a characteristic response to etching that is different from that of said substrate;

forming a trench in said substrate around the desired area of the island, said trench providing access to said buried region;

filling said trench with a material having a characteristic response to etching that is different from that of said substrate;

providing a layer of bridge material over said substrate and the filled trench, and removing a portion of said layer to provide access to said trench while leaving another portion of said layer on said substrate which traverses said trench;

removing said filler material from said trench; and

etching said buried region to thereby form a cavity beneath the island while said traversing portion of said bridge layer suspends the island in place, to thereby separate said island from said substrate.

6. The method of claim 5, further comprising the step of introducing an insulator material in said cavity and said trench to hold the island in place while electrically isolating it from said substrate.

7. The method of claim 6 wherein said insulator material is undoped polysilicon.

8. The method of claim 5 wherein said trench extends at least partially into said buried region.

9. The method of claim 5, further comprising the steps of:

lining opposite walls of said trench and said cavity with layers of oxide, and

depositing a material between said oxide lining layers, to fill the remainder of said cavity.

10. The method of claim 9 wherein said deposited material is undoped polysilicon.

11. The method of claim 5 wherein said filler material is a glass.

12. The method of claim 5 wherein said bridge material comprises an oxide.

13. The method of claim 5 wherein said bridge material comprises polysilicon.