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High thermal resistance bonding material and semiconductor structures using same

  • US 4,888,634 A
  • Filed: 02/03/1989
  • Issued: 12/19/1989
  • Est. Priority Date: 07/24/1987
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure combination in which a uniform temperature is provided throughout a semiconductor chip, said combination comprising a supporting substrate for said chip, and a bonding material between and in direct contact with said chip and said substrate, said bonding material including a binder and high thermal resistance material in the form of sieved particles of generally uniform size with diameters of at least two mils, said particles being dispersed throughout said binder and providing uniform spacing and uniform thermal insulation between said chip and said substrate.

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