Semiconductor laser device

• US 4,888,783 A
• Filed: 03/17/1988
• Issued: 12/19/1989
• Est. Priority Date: 03/20/1987
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Noda, Susumu, Kameya, Masaaki, Hammanaka, Koichi, Ohta, Jun, Kojima, Keisuke, Kyuma, Kazuo
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/169,472
• Time in Patent Office: 642 Days
• Field of Search: 372/46, 372/45, 372/96, 372/50, 372/26, 372/8, 372/44, 372/102, 357/19, 357/30
• US Class Current: 372/44.01
• CPC Class Codes: G02F 3/026 based on laser effects
• CPC Class Codes: H01S 5/0608 controlled by light, e.g. optical switch
• CPC Class Codes: H01S 5/06255 Controlling the frequency of the radiation
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/2275 mesa created by etching

Abstract

In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.

Claims

1. A light-responsive semiconductor device in which a laser oscillation state is controlled by incident light, said device comprising a semiconductor laser structure including, serially disposed, a first electrode, a first conductivity type semiconductor substrate, a first conductivity type semiconductor first cladding layer, an active semiconductor layer, a second conductivity type semiconductor second cladding layer, a layer of material having a conductivity modulatable by light, and a second electrode transparent to light that modulates said layer, said layer responding to incident light to control the oscillation state of said laser.

2. The light-responsive semiconductor device of claim 1 wherein said material having a conductivity modulatable by light is CdS.

3. A light-responsive semiconductor device comprising:

a first conductivity-type substrate;

a first conductivity-type cladding layer, an active layer, and a second conductivity-type cladding layer successively disposed on said substrate;

embedding layers disposed on said substrate at both sides of said active layer and said cladding layers, respectively;

a second conductivity-type cap layer disposed on said second conductivity-type cladding layers and said embedding layers;

a layer of a material having a conductivity modulatable by light disposed on said second conductivity-type cap layer; and

a positive and a negative electrode disposed on said substrate and said conductivity modulatable material layer, respectively.

4. A semiconductor logic element comprising at least two spaced apart semiconductors lasers, said lasers each including serially disposed on a common substrate, a first cladding region, an active region, and a second cladding region, said lasers having a common first electrode disposed on said common substrate and having common layers disposed on said substrate from which the first cladding region and the active region of each laser are formed, each laser having a second electrode disposed in electrical contact with the second cladding region of the respective laser, including a diffraction grating extending at least between the lasers, said common layers forming a light waveguide between adjacent lasers for conducting light therebetween whereby the state of oscillation of one of said lasers biased at a current flow below its threshold laser current may be controlled by the state of oscillation of at least one adjacent laser.

5. The logic element of claim 4, wherein said diffraction grating is a second-order diffraction grating for directing light into and out of the element transverse to said substrate.

6. The logic element of claim 4 wherein said active regions are formed in a common layer having a multiple quantum well structure.

7. The logic element of claim 4 wherein said active regions are formed in a common layer, such as GaAs, having a strong saturable light absorption property when current is not being injected into said active region.

8. The logic element of claim 4 wherein at least one of said semiconductor lasers is a bistable logic element having two stable states in each of which different currents flow through adjacent ones of said second electrodes and having two stable states in which bias voltages of opposite polarities are respectively applied to said second electrodes.

9. A bistable semiconductor laser device comprising:

a substrate having a first electrode disposed thereon;

two different conductivity-type light confinement layers, a first of said confinement layers being disposed on said substrate;

a multiple quantum well active layer disposed between said two light confinement layers and having a peak gain wavelength;

an absorption region including a diffraction grating disposed on a portion of said first of said confinement layers, said absorption region lying between said grating and said substrate, for establishing an oscillation wavelength shorter than the peak gain wavelengthh in response to external light incident on said grating, the incident light switching the state of said light-responsive bistable semiconductor device; and

a current injection region disposed on a portion of said first of said confinement layers and said substrate including current injection means for injecting current into said multiple quantum well active layer other than at said absorption region, said current injection region including a second electrode.

10. The bistable semiconductor laser device of claim 9 wherein said current injection region lacks a diffraction grating on said first of said confinement layers.

11. The bistable semiconductor laser device of claim 9 wherein said current injection region includes a diffraction grating on said first of said confinement layers.

12. The bistable semiconductor laser of claim 10 which switches from a first state to a second state in response to incident light normal to said substrate.

13. The bistable semiconductor laser of claim 11 which switches from a first state to a second state in response to incident light normal to said substrate.

14. The bistable semiconductor laser device of claim 9 wherein said absorption and current injection regions are adjacent each other and said diffraction grating extends through both of said regions.

15. The bistable semiconductor laser device of claim 9 wherein said absorption and current injection regions comprise a ridge waveguide structure for confining light and current in the device.

16. The bistable semiconductor device of claim 14 wherein said absorption and current injection regions are spaced apart on said grating and each of said regions includes a portion of said second electrode.

17. A method of switching a bistable semiconductor laser device including at least two spaced apart semiconductor lasers, said lasers each including, serially disposed on a common substrate, a first cladding region, an active region, and a second cladding region, said lasers having a common first electrode disposed on said common substrate and having common layers disposed on said common substrate from which the first cladding region and the active region of each laser are formed, each laser having a second electrode disposed in electrical contact with the second cladding region of the respective laser, including a diffraction grating extending at least between the lasers, said common layers forming a light waveguide between adjacent lasers for conducting light therebetween, comprising:

biasing a first of said lasers with a current flow less than the threshold laser current of the said first laser; and

alternatively passing a current greater than and less than the threshold laser current of a second laser adjacent said first laser through said second laser to cause (i) oscillation and light emission and (ii) termination of oscillation and light emission of said second laser, respectively, thereby to cause (iii) oscillation and light emission and (iv) termination of oscillation and light emission of said first laser, respectively, in response.

18. A method of switching a bistable semiconductor laser device including at least three spaced apart semiconductor lasers, said lasers each including, serially disposed on a common substrate, a first cladding region, an active region, and a second cladding region, said lasers having a common first electrode disposed on said substrate and having common layers disposed on said common substrate from which the first cladding region and the active region of each laser are formed, each laser having a second electrode disposed in electrical contact with the second cladding region of the respective laser, including a diffraction grating extending at least between the lasers, said common layers forming a light waveguide between adjacent lasers for conducting light therebetweenn, comprising:

biasing a second of said lasers disposed between a first and third of said lasers with a current flow less than the laser threshold current of the said second laser; and

alternatively passing current greater than the respective laser threshold currents of said first and third lasers through said first and third lasers to cause (i) oscillation and light emission and (ii) termination of oscillation and light emission of said first and third lasers, respectively, thereby to cause (iii) oscillation and light emission and (iv) termination of oscillation and light emission of said second laser, respectively, in response.

19. A method of switching a bistable semiconductor laser device including at least three spaced apart semiconductor lasers, said lasers each including, serially disposed on a common substrate, a first cladding region, an active region, and a second cladding region, said lasers having a common first electrode disposed on said common substrate and having common layers disposed on said common substrate from which the first cladding region and the active region of each laser are formed, each laser having a second electrode disposed in electrical contact with the second cladding region of the respective laser, including a diffraction grating extending at least between the lasers, said common layers forming a light waveguide between adjacent lasers for conducting light therebetween, comprising:

biasing a second of said lasers disposed between a first and third of said lasers with a current flow less than the laser threshold current of the said second laser; and

alternatively passing currents greater than the respective laser threshold currents of at least one of said first and third lasers through said first and third lasers to cause (i) oscillation and light emission and (ii) termination of oscillation and light emission of one of said first and third lasers, respectively, thereby to cause (iii) oscillation and light emission and (iv) termination of oscillation and light emission of said second laser, respectively, in response.