Process for the photocatalytic decomposition of water into hydrogen and oxygen

• US 4,889,604 A
• Filed: 08/06/1987
• Issued: 12/26/1989
• Est. Priority Date: 08/06/1987
• Status: Expired due to Fees

• Current Assignee: Council of Scientific and Industrial Research
• Original Assignee: Council of Scientific & Industrial Research
• Inventors: Khan, M. M. Taqui, Bhardwaj, R. Chandra
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Hsing, Ben C.
• Application Number:
  US07/082,816
• Time in Patent Office: 873 Days
• Field of Search: 204/157.5, 204/129
• US Class Current: 204/157.5
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: Y02E 60/36 Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Abstract

Hydrogen and oxygen are obtained by the photocatalytic decomposition of water by passing light in an inert atmosphere through an aqueous solution of dioxygen complex of ruthenium and EDTA in which is suspended a semiconductor of hexagonal crystal structure loaded with a noble metal and a transition metal oxide. Hydrogen and oxygen are known to have various uses. Precipitation of the semiconductor material and annealing it at a temperature from 300°-350° C. result in the semiconductor of hexagonal structure which is suspended in the aqueous solution.

Claims

1. A process for the photocatalytic decomposition of water into hydrogen and oxygen which comprises loading a semiconductor having a hexagonal crystal structure with a metal selected from Pt, Rh, Ir and In and a transition metal oxide, suspending the loaded semiconductor in an aqueous solution of dioxygen complex of ruthenium, passing light through the suspended loaded semiconductor maintained under an inert atmosphere and separating the hydrogen and oxygen so formed.

2. A process as claimed in claim 1 wherein the dioxygen complex of ruthenium is represented by the formula [{Ru(L)(OH)₂ }O₂ ] wherein L is selected from EDTA, HEDTA, CDTA and PDTA.

3. A process as claimed in claim 1 wherein the semiconductor having hexagonal crystal structure is prepared by precipitating the constituents of the semiconductor material and annealing it at a temperature ranging from 300°

-350°

C.

4. A process as claimed in claim 1 wherein the semiconductor material employed is selected from CdS, ZnS, Cd_x Zn_x S wherein x is an integer, and CdS doped with Ag₂ S, TiO₂, or BaTiO₃.

5. A process as claimed in claim 1 wherein the transition metal oxide is selected from RuO₂ and OsO₄.

6. A process as claimed in claim 1, wherein the complex is prepared by first preparing [{Ru(L)(0H)₂ }O₂ ]K by dissolving complex K₂ RuCl₅ (H₂ O) in only a substantially sufficient amount of a dilute aqueous solution of HClO₄ to dissolve said complex and adding said solution to a hot solution of Na₂ (H₂ L) dissolved in HClO₄ where L is EDTA, HEDTA, CDTA or PDTA, refluxing the mixture, filtering and heating the filtrate with ethanol and adjusting the pH to 7.5 to 8.0 and bubbling oxygen therethrough.

7. A process as claimed in claim 1 wherein ruthenium is loaded on the semiconductor by stirring a mixture of an aqueous solution of a ruthenium salt and an aqueous suspension of the semiconductor and thereafter irradiating said mixture in a pyrex cell.

8. A process as claimed in claim 1 wherein the light used is solar light.

9. A process as claimed in claim 8 wherein the solar light is in the visible spectrum and the semiconductor material is CdS, ZnS, Cd_x Zn_x S or CdS doped with Ag₂ S, where x is an integer.

10. A process as claimed in claims 1 wherein the light is ultraviolet and the semiconductor material is CdS doped with TiO₂ or BaTiO₃.

11. A process as claimed in claim 1 wherein the inert atmosphere is created by nitrogen or argon.