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Process and device for selective extraction of H.sub.2 S from an H.sub.2 S-containing gas

  • US 4,889,700 A
  • Filed: 06/03/1987
  • Issued: 12/26/1989
  • Est. Priority Date: 10/04/1985
  • Status: Expired due to Term
First Claim
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1. A process for the selective extraction of H2 S from a gas containing a plurality of gaseous acid compounds, one of which is H2 S, by operating in a first column comprising an absorption zone and a second column comprising a mixed treatment zone provided with an upper enrichment zone and a lower regeneration zone, said process comprising the steps ofintroducing into the absorption column an absorbent liquid for acid compounds, which is selective for H2 S and regeneratable by heating, and circulating said absorbent liquid and the gas to be treated in countercurrent in said absorption zone to yield a treated gas with a reduced level of H2 S and a stream of absorbent liquid charged with said gaseous acid compounds,transporting said stream of absorbent liquid charged with said gaseous acid compounds to the second column and introducing said stream of charged absorbent liquid into the upper enrichment zone, said stream of charged absorbent liquid travelling through the enrichment zone to the regeneration zone at the bottom of the second column,heating the absorbent liquid charged with the gaseous acid compounds in the lower regeneration zone, thereby releasing said gaseous acid compounds and obtaining a regenerated absorbent liquid and also a gaseous acid effluent, the latter containing the released gaseous acid compounds and being richer in H2 S than the gaseous acid compound fraction of the gas to be treated,transporting the H2 S-rich gaseous acid effluent into the upper enrichment zone by stripping said effluent with the absorbent liquid vapor generated by said heating,contacting in said upper enrichment zone the H2 S-rich gaseous acid effluent with the charged absorbent liquid flowing from the absorption column and forming an equilibrium between the H2 S-rich gaseous acid effluent and said charged absorbent liquid,tapping at the equilibrium location a fraction of the H2 S-rich gaseous effluent available at said location,controlling the heat supplied to the lower regeneration zone to maintain a temperature difference of no more than about 30°

  • C. between the temperature in the enrichment zone at the tapping level and the temperature of the absorbent liquid entering the absorption column, andcollecting at the top of the second column upper enrichment zone the remainder of the gaseous acid effluent resulting from the regeneration of the charged absorbent liquid in the lower regeneration zone.

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