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Method of forming a high temperature stable ohmic contact to a III-V substrate

  • US 4,889,831 A
  • Filed: 11/30/1987
  • Issued: 12/26/1989
  • Est. Priority Date: 05/08/1987
  • Status: Expired due to Term
First Claim
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1. A process for manufacturing a semiconductor device, comprising the steps of:

  • preparing a substrate of a III-V compound semiconductor having a type of conductivity;

    forming a layer of Inx Ga1-x As on the substrate, wherein the layer has x greater than 0 and less than 1, wherein said layer has a type of conductivity the same as the type of conductivity of the substrate, and wherein the layer forms an ohmic contact with the substrate;

    forming an electrode of a refractory metal or a silicide thereof on the Inx Ga1-x As layer, wherein the electrode has an edge and forms an ohmic contact with the Inx Ga1-x As layer;

    patterning the Inx Ga1-x As layer in alignment with the edge of the electrode with the electrode as a mask;

    locally implanting an ion into a region of the substrate with the electrode as a mask, so as to have the ion-implanted region of the substrate be made in alignment with the edge of the electrode; and

    heat annealing to activate the ion-implanted region of the substrate.

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