Method for diffusion bonding aluminum

• US 4,890,784 A
• Filed: 03/28/1983
• Issued: 01/02/1990
• Est. Priority Date: 03/28/1983
• Status: Expired due to Term

• Current Assignee: Rockwell International Corporation
• Original Assignee: Rockwell International Corporation
• Inventors: Bampton, Clifford C.
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US06/479,225
• Time in Patent Office: 2,472 Days
• Field of Search: 228/194, 228/195, 228/198, 228/203, 228/263.17, 228/217, 148/12.7 A
• US Class Current: 228/194
• CPC Class Codes: B23K 35/002 at least one of the workpieces being of light metal
• CPC Class Codes: B23K 35/286 Al as the principal constituent

Abstract

Diffusion bonding of aluminum alloys is performed using a thin alloy interlayer placed between mating surfaces of the alloy members to be bonded, the interlayer having a specific composition which is dependent upon the composition of the alloy members, the diffusion bonding temperature, the interdiffusion rates of the alloy members compared with the interlayer, and the solid state diffusion rate of the interlayer into the alloy members. The process is preferably further characterized by isothermal solidification of the interlayer after the diffusion bonding temperature has been reached.

Claims

1. A method of diffusion bonding which comprises:

providing two aluminum alloy members to be diffusion bonded within a temperature range suitable for solid state diffusion bonding, said aluminum alloy members each having at least one alloy additive therein;

providing an interlayer of alloy which comprises aluminum and an alloy additive which is also in said alloy members, the percentage of said aluminum in said interlayer being less than the percentage of said aluminum in said alloy members, the percentage of said additive being large enough to assure that said interlayer will be at least partially liquid within said diffusion bonding temperature range for said alloy members, said interlayer having a surface oxide layer, said interlayer having a melting point below said temperature range, said alloy of said members being soluble in said interlayer when said interlayer is in a liquid phase;

positioning said alloy members and said interlayer in an assembly such that said interlayer is sandwiched between the surfaces of said alloy members to be bonded;

heating said assembly to within said temperature range such that said interlayer is transformed into a liquid phase and said surface oxide layer disrupted; and

maintaining said assembly within said temperature range such that portions of said aluminum alloy members dissolve into said interlayer at a faster rate than said interlayer diffuses into said members, said interlayer eventually solidifies between said alloy members primarily due to its resulting increased aluminum content, said diffusion bonding of said alloy members and said interlayer occurs.

2. The method of claim 1 where said maintaining step is such that said interlayer solidifies substantially isothermally.

3. The method of diffusion bonding as recited in claim 2 wherein said interlayer is essentially an aluminum-magnesium alloy.

4. The method of diffusion bonding as recited in claim 3, wherein said interlayer has a thickness of less than ten micrometers.

5. The method of diffusion bonding as recited in claim 4 further comprising removing an oxide layer from the surfaces of the alloy members to be joined prior to placing the interlayer therebetween.

6. The method of claim 5 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

7. The method of claim 4 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

8. The method of diffusion bonding as recited in claim 3 further comprising removing an oxide layer from the surfaces of the alloy members to be joined prior to placing the interlayer therebetween.

9. The method of claim 8 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

10. The method of claim 3 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

11. The method of diffusion bonding as recited in claim 1 wherein the melting point of said interlayer increases as said aluminum alloy members dissolve into said interlayer.

12. The method of claim 1 wherein the melting point of said interlayer is at least 20°

C. below the lowest temperature of said temperature range.

13. The method of claim 12 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

14. The method of claim 1 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

15. The method of claim 2 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

16. A method of diffusion bonding as recited in claim 1 wherein said maintaining step is continued to allow said interlayer to diffuse into said aluminum alloy members after solidification of said interlayer such that a homogeneous diffusion bond between said aluminum alloy members results.

17. The method of claim 16 wherein the melting point of said interlayer is at least 20°

C. below the lowest temperature of said temperature range.

18. The method of claim 16 wherein the liquidus line for the interlayer alloy rises at a rate of at least 5°

C. per increase in weight percent of aluminum.

19. The method of claim 16 wherein said additive of said interlayer has a high solid state diffusity in the alloy of said alloy members.

20. The method of claim 1 wherein said additive of said interlayer has a high solid state diffusity in the alloy of said alloy members.

21. The method of diffusion bonding as recited in claim 1 wherein said alloy of said members is a fine grain alloy.

22. The method of diffusion bonding as recited in claim 1 wherein said alloy additive of said interlayer is magnesium, copper, or zinc.

23. The method of diffusion bonding as recited in claim 1 wherein said surface layer has a thickness of less than ten micrometers.

24. The method of diffusion bonding as recited in claim 1 wherein said diffusion bonding temperature is between 482°

to 535°

C.

25. The method of diffusion bonding as recited in claim 1 wherein said interlayer is essentially an aluminum-magnesium alloy.

26. The method of diffusion bonding as recited in claim 1 further comprising removing an oxide layer from the surfaces of the alloy members to be joined prior to placing the interlayer therebetween.