Controlled compression furnace bonding

• US 4,892,245 A
• Filed: 11/21/1988
• Issued: 01/09/1990
• Est. Priority Date: 11/21/1988
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Speilberger, Richard K., Balgaard, Luverne O., Dunaway, Thomas J., Dicks, Lori A., Loy, Jerald M.
• Primary Examiner(s): Godici, Nicholas P.
• Assistant Examiner(s): Heinrich, Samuel M.
• Application Number:
  US07/274,431
• Time in Patent Office: 414 Days
• Field of Search: 228/123, 228/180.2, 228/180.1, 228/179, 228/212, 228/219, 228/220, 228/242, 228/240, 228/254, 228/6.2, 228/44.7, 228/243, 269/903, 269/21, 269/309
• US Class Current: 228/180.22
• CPC Class Codes: B23K 1/008 Soldering within a furnace B23K1/012 takes precedence
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 24/50 Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto thin flexible metallic tape with or without a film carrier H01L23/49572, flexible insulating substrates H01L23/4985, H01L23/5387
• CPC Class Codes: H01L 24/86 using tape automated bonding [TAB]
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/0103 Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 Monolayer substrate
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: Y10S 269/903 : Work holder for electrical circuit assemblages or wiring systems

Abstract

Disclosed is a system and method for controlled compression furnace bonding of a semiconductor chip to conductive elements of a leadframe. The system comprises a holding member having a chip support surface for supporting a semiconductor chip and a positioning system for precisely positioning conductive elements of a leadframe with corresponding bonding locations on the semiconductor chip. A furnace heating system comprising a furnace is employed for heating and bonding the conductive elements to the chip bonding locations. The method invention comprises positioning a semiconductor chip comprising a plurality of bonding locations in a holding member with a chip support surface; providing performed bonding material for connecting conductive elements of a leadframe with the chip bonding locations; aligning the conductive elements of a leadframe with corresponding bonding locations on the semiconductor chip; moving the leadframe conductive elements toward the chip bonding locations so that the bonding material is aligned with the conductive elements in the chip bonding locations; furnace bond heating the bonding material to a point of reflow; and cooling the bonding material to complete the bonding process between the leadframe conductive elements and the corresponding chip bonding locations.

Claims

1. A system for controlled compression furnace bonding of a semiconductor chip to conductive elements of a leadframe, comprising:

(a) holding means comprising a holding member having a chip support surface for supporting a semiconductor chip;

(b) positioning means for precisely positioning conductive elements of a leadframe with corresponding bonding locations on the semiconductor chip, the positioning means comprising;

(i) standoff means for maintaining vertical distance between the leadframe conductive elements and the semiconductor chip bonding locations;

(ii) planar gravity means comprising an insert placed on top of the leadframe for providing controlled compression force against leadframe conductive elements so that all leadframe conductive elements are in conductive connection with corresponding semiconductor chip bonding locations; and

(c) furnace heating means comprising a furnace for heating and conductively bonding the conductive elements with the chip bonding locations.

2. The bonding system according to claim 1 wherein the furnace means comprises a belt furnace for heating the conductive elements and the semiconductor chip.

3. A bonding system according to claim 1 wherein the furnace means comprises means for creating a neutral or reducing atmosphere surrounding the chip bonding locations.

4. A bonding system according to claim 1 wherein the positioning means comprises:

(a) a chamber extending from the chip support surface into the holding member;

(b) vacuum means for creating a vacuum for temporarily holding the chip to permit fine alignment of the chip bonding locations with the conductive elements of the leadframe; and

(c) a clamp spring assembly for securely clamping the positioned chip and leadframe prior to heating the chip in the furnace.

5. A bonding system according to claim 1 wherein the positioning means comprises:

(a) alignment pegs for receiving and aligning the leadframe; and

(b) surfaces defining alignment holes located in the holding member, the alignment holes being constructed and arranged for slidable receipt of the alignment pegs.

6. A bonding system according to claim 1 wherein the planar gravity means insert comprises a rigid and unyielding planar quartz surface for providing a contact force to the conductive elements.

7. A bonding system according to claim 1 wherein the planar gravity means insert comprises a partially compressible surface for providing a sufficient contact force to the conductive elements to accommodate non-compressible standoff means independent of any chip cracking during the bonding process.

8. A bonding system according to claim 1 wherein the standoff means comprises leadframe conductive elements comprising preformed reflowable solder bumps configured for conductively bonding the conductive elements to the chip bonding locations and dielectric material configured proximate the reflowable solder bumps.

9. A bonding system according to claim 1 wherein the standoff means comprises chip bonding locations comprising conductive metalized reflowable bumps configured for conductively bonding the semiconductor chip with the leadframe conductive element and dielectric material located on the leadframe conductive elements for positioning proximate the semiconductor chip bumps.

10. A bonding system according to claim 1 wherein the standoff means comprises chip bonding locations comprising preformed reflowable conductive metalized bumps configured for conductively bonding the semiconductor chip with the leadframe conductive elements and dielectric material proximate the bumps.

11. A bonding system according to claim 1 wherein the standoff means comprises chip bonding locations comprising gold bumps configured for conductively bonding the semiconductor chip with the leadframe conductive elements.

12. A method for providing controlled compression furnace bonding of a semiconductor chip to the conductive elements of a leadframe, comprising the steps of:

(a) positioning a semiconductor chip comprising a plurality of bonding locations in a holding member with a chip support surface;

(b) providing preformed bonding material for connecting conductive elements of a leadframe with the chip bonding locations and for maintaining vertical distance between the leadframe conductive elements and the semiconductor chip bonding locations;

(c) aligning the conductive elements of a leadframe with corresponding bonding locations on the semiconductor chip;

(d) moving the leadframe conductive elements toward the chip bonding locations by placing planar gravity means comprising an insert on top of the leadframe conductive elements so that the bonding material is aligned with the conductive elements and the chip boding locations;

(e) furnace bond heating the bonding material; and

(f) cooling the bonding material to complete the bonding process between the leadframe conductive elements and the corresponding chip bonding locations.

13. A method according to claim 12 wherein the moving step comprises placing a rigid and unyielding planar quartz surface onto the leadframe independent of any biasing force other than gravity to provide a contact force to the conductive elements.

14. A method according to claim 12 wherein the moving step comprises placing a partially compressible surface onto the leadframe independent of any biasing force other than gravity to accommodate non-compressible bonding material and to prevent chip cracking during the furnace bond heating step.

15. A method according to claim 12 further comprising the step of creating a neutral or reducing atmosphere surrounding the bonding material during the bonding process.

16. A method according to claim 12 wherein the positioning step comprises:

(a) providing a chamber extending from the chip surface into the holding member;

(b) creating a vacuum for temporarily holding the chip while precisely aligning the chip with the corresponding leadframe conductive elements; and

(c) locking the chip in alignment with the leadframe conductive elements prior to heating.

17. A method according to claim 12 wherein the providing preformed bonding material step comprises providing leadframe conductive elements preformed with solder bumps and dielectric material proximate the solder bumps.

18. A method according to claim 12 wherein the providing preformed bonding material step comprises providing preformed solder bumps and dielectric material on the semiconductor chip bonding locations.

19. A method according to claim 12 wherein the providing preformed bonding material step comprises providing gold bumps on the semiconductor chip bonding locations.