Process for PECVD of silicon oxide using TEOS decomposition

• US 4,892,753 A
• Filed: 10/26/1988
• Issued: 01/09/1990
• Est. Priority Date: 12/19/1986
• Status: Expired

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Umotoy, Salvador P., Maydan, Dan, White, John M., Collins, Kenneth S., Law, Kam S., Perlov, Ilya, Leung, Cissy, Adamik, John A., Wang, David N.
• Primary Examiner(s): Pianalto, Bernard
• Application Number:
  US07/262,993
• Time in Patent Office: 440 Days
• Field of Search: 427/38, 427/294, 427/314
• US Class Current: 427/579
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence

Abstract

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

Claims

1. In a process for depositing silicon dioxide onto a substrate by exposing the substrate to plasma formed from a gas mixture which includes tetraethylorthosilicate, the steps of:

positioning the substrate on a support within a vacuum chamber and adjacent a gas manifold which is an RF electrode and includes a multiplicity of closely-spaced gas outlet holes closely adjacent the substrate; and

communicating the gas mixture into the manifold while applying RF energy between the manifold and the substrate support and maintaining the total pressure in the chamber within the range of about 1 to 50 torr and the temperature of the substrate in the range of about 200°

C. to 500°

C.

2. The process of claim 1, wherein the chamber pressure is about 1 to 12 torr.

3. The process of claim 1, wherein the gas mixture includes oxygen.

4. The process of claim 1, wherein the chamber pressure is about 1 to 12 torr and the gas mixture includes oxygen.

5. The process of claim 1, wherein the distance between the gas outlet holes and the substrate is less than about one centimeter.

6. The process of claim 1, 2, 3, 4, or 5, further comprising communicating a purging gas into the vacuum chamber from the periphery of the manifold in a flow radially away from the substrate to confine the deposition plasma species to the substrate.

7. The process of claim 1, 2, 3, 4 or 5, further comprising communicating purging gas into the vacuum chamber in upwardly and downwardly directed flows merging about the periphery of the substrate and moving radially outwardly thereof for confining the reactive deposition species to the substrate.

8. The process of claim 1, 2, 3, 4 or 5, further comprising communicating an inert gas into the chamber.

9. The process of claim 8, wherein the inert gas is communicated into the gas inlet manifold.

10. The process of claim 8, further comprising communicating purging gas into the vacuum chamber in upwardly and downwardly directed flows merging about the periphery of the substrate and moving radially outwardly thereof for confining the reactive deposition species to the substrate.

11. The process of claim 9, further comprising communicating purging gas into the vacuum chamber in upwardly and downwardly directed flows merging about the periphery of the substrate and moving radially outwardly thereof for confining the reactive deposition species to the substrate.

12. In a process of depositing silicon dioxide onto a substrate by exposing the substrate to reactive deposition species resulting from the decomposition of tetraethylorthosilicate in an oxidizing plasma, the steps of positioning the substrate on a support within a vacuum chamber and adjacent a manifold which is an RF electrode and which includes a multiplicity of closely-spaced outlet holes closely adjacent the substrate;

and communicating tetraethylorthosilicate and an oxidizing species into the chamber via the manifold holes while applying RF energy between the manifold and the substrate support and maintaining the total pressure in the chamber within the range of about 1 to 50 torr.