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Wide band gap semiconductor light emitting devices

  • US 4,894,832 A
  • Filed: 09/15/1988
  • Issued: 01/16/1990
  • Est. Priority Date: 09/15/1988
  • Status: Expired due to Fees
First Claim
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1. Wide band gap, single conductivity type semiconductor light emitting device, the device having at least two electrodes and an active region between the electrodes, the active region including a carrier recombination region and comprising an essentially single crystal semiconductor compound of a single conductivity type selected from the group of II-VI and III-V semiconductor compounds and mixed compounds, characterized in that separate means for carrier introduction into the active region is provided, whereby in operation, application of a bias potential across the electrodes below that required for carrier multiplication by avalanche breakdown enables excitation of light emission by separate carrier introduction at a lower energy than would be required without the bias potential.

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