Wide band gap semiconductor light emitting devices

• US 4,894,832 A
• Filed: 09/15/1988
• Issued: 01/16/1990
• Est. Priority Date: 09/15/1988
• Status: Expired due to Fees

• Current Assignee: North American Philips Corp. (Koninklijke Philips N.V.)
• Original Assignee: North American Philips Corp. (Koninklijke Philips N.V.)
• Inventors: Colak, Sel B.
• Primary Examiner(s): FONT, FRANK G
• Application Number:
  US07/244,379
• Time in Patent Office: 488 Days
• Field of Search: 372/43, 372/44, 372/45, 372/50, 372/74, 357/16, 357/17, 357/88, 357/89
• US Class Current: 372/44.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/0004 Devices characterised by their operation
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01S 5/04 Processes or apparatus for excitation, e.g. pumping, e.g. by electron beamsH01S5/06 takes precedence
• CPC Class Codes: H01S 5/347 in AIIBVI compounds, e.g. ZnCdSe- laser
• CPC Class Codes: H01S 5/40 Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30 H01S5/50 takes precedence

Abstract

Wide band gap, single conductivity type semiconductor light emitting diodes (LED'"'"'s) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, such as an electron beam of a pn junction diode, to achieve light emission. The addition of Fabry-Perot surfaces converts the LED to a semiconductor laser. Efficiency enhancing heterostructure, including potential wells and staircases, may be added to the device. Arrays of such devices on a substrate may be scanned by an electron beam to display video information.

Claims

1. Wide band gap, single conductivity type semiconductor light emitting device, the device having at least two electrodes and an active region between the electrodes, the active region including a carrier recombination region and comprising an essentially single crystal semiconductor compound of a single conductivity type selected from the group of II-VI and III-V semiconductor compounds and mixed compounds, characterized in that separate means for carrier introduction into the active region is provided, whereby in operation, application of a bias potential across the electrodes below that required for carrier multiplication by avalanche breakdown enables excitation of light emission by separate carrier introduction at a lower energy than would be required without the bias potential.

2. The device of claim 1 in which the active region includes at least one potential well.

3. The device of claim 2 in which the composition of the active region is n-type ZnS_x Se_1-x and the composition of the potential well is n-type ZnSe.

4. The device of claim 2 in which the composition of the active region is n-type Al_x Ga_1-x N, and the composition of the potential well is n-type GaN.

5. The device of claim 1 in which the active region includes at least one staircase region.

6. The device of claim 5 in which the composition of the active region corresponds to the formula n-type ZnS_x Se_1-x, and the composition changes uniformly across the staircase region.

7. The device of claim 6 in which the value of x across the staircase region ranges from a low of about 0.05 to a high of about 0.3.

8. The device of claim 1 in which the active region includes at least one potential well and at least one staircase region.

9. The device of claim 8 in which the potential well is located within the staircase region.

10. The device of claim 1 in which separate carrier introduction is achieved by impingment of an electron beam on one surface of the device.

11. The device of claim 1 in which separate carrier introduction is achieved by a carrier injection structure on one surface of the active region.

12. The device of claim 11 in which the carrier injection structure is a pn junction diode.

13. The device of claim 11 in which at least one carrier injection structure is located in a single crystal semiconductor substrate, and at least one active region comprising one or more epitaxial layers is located over the carrier injection structure on the substrate.

14. The device of claim 13 in which the carrier injection structure is a pn junction diode.

15. The device of claim 14 in which the substrate material is selected from the group consisting of single crystal silicon and gallium arsenide.

16. The device of claim 13 in which the substrate contains an array of spaced apart carrier injection structures and in which the substrate supports an array of active regions located over the carrier injection structure array.

17. The device of claim 1 in which a pair of parallel reflective surfaces are provided to form a Fabry-Perot cavity for at least the recombination region of the active region, thereby to promote amplification and lasing of the emitted light.

18. The device of claim 17 in which the electrodes have mutually parallel surfaces and the normal to the parallel reflective surfaces is parallel to the electrode surfaces, so that the electrodes are located outside the path of the laser light.