Polysilicon thin film process

• US 4,897,360 A
• Filed: 12/09/1987
• Issued: 01/30/1990
• Est. Priority Date: 12/09/1987
• Status: Expired due to Term

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Burns, David W., Guckel, Henry
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Bunch, William
• Application Number:
  US07/131,082
• Time in Patent Office: 783 Days
• Field of Search: 148/DIG. 1, 148/3, 148/17, 148/25, 148/97, 148/122, 148/169, 148/33, 148/33.1, 148/33.2, 156/628, 156/647, 156/653, 357/26, 357/55, 357/59, 437/7, 437/60, 437/80, 437/109, 437/81, 437/109, 437/82, 437/174, 437/233, 437/247, 437/901, 437/914, 437/974
• US Class Current: 216/2
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: H01L 21/3221 of silicon bodies, e.g. for gettering
• CPC Class Codes: Y10S 148/025 Deposition multi-step
• CPC Class Codes: Y10S 148/097 Lattice strain and defects
• CPC Class Codes: Y10S 148/122 Polycrystalline
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

Polycrystalline silicon is deposited in a film onto the surface of a substrate which has been carefully prepared to eliminate any defects or contaminants which could nucleate crystal growth on the substrate. The deposition is carried out by low pressure decomposition of silane at substantially 580° C. to cause a film of fine grained crystals of polysilicon to be formed having grain sizes averaging less than about 300 Angstroms after annealing. Such a film is very uniform and smooth, having a surface roughness less than about 100 Angstroms RMS. Annealing of the film and substrate at a low temperature results in a compressive strain in the field that decreases over the annealing time, annealing at high temperatures (e.g., over 1050° C.) yields substantially zero strain in the film, and annealing at intermediate temperatures (e.g., 650° C. to 950° C.) yields tensile strain at varying strain levels depending on the annealing temperature and time. Further processing of the polysilicon films and the substrate can yield isolated diaphragms of the polysilicon film which are supported only at edges by the substrate and which have substantial lateral dimensions, e.g., 1 cm by 1 cm. Such that structures can be used as pressure sensor diaphragms, X-ray masks, and optical filters, and can be provided with holes of varying sizes, shape and number, which can serve as X-ray mask patterns. The diaphragms can be provided with numerous holes of uniform size and spacing which allows the diaphragms to be used as filters in ultrafiltration applications.

Claims

1. A method of forming a polysilicon film having selected mechanical properties, comprising the steps of:

(a) providing a substrate having a surface on which polysilicon can be deposited;

(b) preparing the substrate surface so that it is essentially free of defects and contaminants upon which nucleation of polysilicon crystal grains can occur;

(c) depositing silicon in a film onto the surface of the substrate by decomposition of silane at substantially 580°

C. or less under conditions such that the film deposited has substantially uniform fine grain size; and

(d) annealing the deposited film at a temperature between about 650°

C. and 950°

C. and for a selected time such that the polysilicon film is in tensile strain after annealing;

wherein the crystal grains of the polysilicon have an average size less than about 300 Angstroms after annealing.

2. The method of claim 1 wherein the step of depositing is performed under conditions such that the average grain size is about 100 Angstroms after annealing.

3. The method of claim 1 wherein the substrate includes single crystal silicon.

4. The method of claim 3 wherein the substrate additionally includes a layer of silicon nitride formed on the single crystal silicon and wherein the step of depositing is performed to deposit the silicon in a film on the exposed surface of the silicon nitride layer.

5. The method of claim 1 wherein the step of annealing is performed at a temperature between about 700°

C. and 850°

C. for at least 30 minutes so that the polysilicon film is in tensile strain after annealing.

16. The method of claim 1 including the additional step of etching away the substrate under a portion of the annealed film so that that portion forms a free film which is in tensile strain and which is supported at its edges by the substrate.

6. A method of making strain controlled polysilicon film comprising the steps of:

(a) providing a substrate having an unannealed film of amorphous or polycrystalline silicon formed thereon, the film having a structure such that when the film is annealed the average grain size of the crystals will be no larger than about 300 Angstroms; and

(b) annealing the film by heating the film and substrate at a temperature between about 650°

C. and 950°

C. for a time selected to yield a desired tensile strain level in the film.

7. The method of claim 6 wherein the step of annealing the film by heating is carried out by raising the temperature of the substrate and film from about 580°

C. to the desired annealing temperature at a steady rate over a selected period of time and then maintaining the substrate and film at the desired annealing temperature over an annealing time of at least 30 minutes.

8. The method of claim 6 wherein the step of annealing the film by heating is carried out by heating the film in an atmosphere consisting essentially of nitrogen.

9. A method of forming a thin polysilicon diaphragm comprising the steps of:

(a) depositing silicon nitride in a layer on a front surface of a base of single crystal silicon having front and back parallel surfaces;

(b) depositing silicon in a film onto the surface of the silicon nitride layer by decomposition of silane at substantially 580°

C. or less under conditions such that the film deposited has substantially uniform fine structure;

(c) depositing another layer of silicon nitride over the silicon film deposited on the front surface of the substrate;

(d) annealing the substrate and the films deposited thereon at a temperature between about 650°

C. and 950°

C. and for a time such that the strain in the deposited polysilicon film is at a selected tensile strain;

(e) exposing the single crystal silicon of the substrate on the back surface of the substrate in an area underlying the polysilicon film which will be the desired area of the diaphragm;

(f) anisotropically etching the exposed area of the back surface of the substrate and terminating the etch on the silicon nitride layer deposited on the front surface of the substrate to provide a free diaphragm which includes the polysilicon film.

10. The method of claim 9 including the additional step of removing the exposed silicon nitride layers from the polysilicon film to leave the polysilicon film as the diaphragm.

11. The method of claim 9 wherein the step of depositing the silicon is performed under conditions such that the crystal grains of the polysilicon have an average size less than about 300 Angstroms after annealing.

12. The method of claim 11 wherein the step of depositing silicon in a film is carried out under conditions such that the average size of the polysilicon crystal grains is about 100 Angstroms after annealing.

13. A method of making strain controlled polysilicon film diaphragms or beams comprising the steps of:

(a) providing a substrate having an unannealed film of amorphous or polycrystalline silicon formed thereon, the film having a structure such that when the film is annealed the average grain size of the crystals will be no longer than about 300 Angstroms;

(b) annealing the film by heating the film and substrate at a temperature between about 650°

C. and 950°

C. for a time selected to yield a desired tensile strain level in the film; and

(c) etching away the substrate under a portion of the annealed film so that that portion forms a free film which is in tensile strain and is supported at its edges by the substrate.

14. The method of claim 13 wherein the step of annealing the film by heating is carried out by raising the temperature of the substrate and film from about 580°

C. to the desired annealing temperature at a steady rate over a selected period of time and then maintaining the substrate and film at the desired annealing temperature over an annealing time of at least 30 minutes.

15. The method of claim 13 wherein the step of annealing the film by heating is carried out by heating the film in an atmosphere consisting essentially of nitrogen.