Method of fabricating a high density electrical interconnect

• US 4,899,439 A
• Filed: 06/15/1989
• Issued: 02/13/1990
• Est. Priority Date: 06/15/1989
• Status: Expired due to Term

• Current Assignee: Stovokor Technology LLC (Intellectual Ventures LLC)
• Original Assignee: Microelectronics and Computer Technology Corporation
• Inventors: Potter, Curtis N., Kroger, Harry, Smith, Lawrence N.
• Primary Examiner(s): Arbes, Carl J.
• Application Number:
  US07/367,418
• Time in Patent Office: 243 Days
• Field of Search: 29/846, 29/830, 174/68.5, 361/414, 428/901
• US Class Current: 29/846
• CPC Class Codes: H05K 1/0272 Adaptations for fluid transport, e.g. channels, holes
• CPC Class Codes: H05K 1/0289 having a matrix lay-out, i.e. having selectively interconnectable sets of X-conductors and Y-conductors in different planes
• CPC Class Codes: H05K 3/4647 by applying an insulating layer around previously made via studs
• CPC Class Codes: Y10S 428/901 Printed circuit
• CPC Class Codes: Y10T 29/49126 Assembling bases
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A high density electrical interconnect having a plurality of metallic conductors supported from metallic pillars which are electrically isolated from the ground plane by openings. The interconnect can be fabricated using a temporary support dielectric, which may be removed after completion to provide an air dielectric or be replaced with a more suitable permanent dielectric. The removal of the temporary support allows the conductors to be coated with protective layers or with a layer of a higher conductivity.

Claims

1. A method of fabricating a high density electrical interconnect system comprising,

covering a substrate with a layer of an insulating material,

applying an adhesion layer to the insulating material,

applying a conductive ground plane and a plurality of first layers of support pillars over the adhesion layer leaving openings in the ground plane around the first layers for isolating the support pillars from the ground plane,

applying a second adhesion layer to the first layers and the ground plane,

applying a second layer of insulating material over the second adhesion layer,

etching holes in the second layer of insulating material over the first layers of the support pillars,

plating a second layer onto each of the first layers of the support pillars,

applying a third adhesion layer over the second layer of the support pillars,

applying a third layer of insulating material over the third adhesion layer,

etching the third layer of insulating material to form openings for a third layer of support pillars and at least one metallic conductor,

plating into the openings in the third layer of insulating material a third layer of support layers onto some of the second layers of support layers,

forming additional layers of support pillars and metallic conductors above the third layer of support layers and said metallic conductor, and

removing the layers of insulating material.

2. The method of claim 1 including,

placing a low dielectric material into the space created by removing the insulating material.

3. The method of claim 1 including,

applying a protective coating to the pillars and the conductors.

4. The method of claim 3 including,

placing a low dielectric material into the space created by removing the insulating material.

5. The method of claim 1 including,

coating the metallic conductors with a metal having a higher conductivity than the metallic conductors after removing the layers of insulating material.