Method of treating photoresists

• US 4,900,938 A
• Filed: 04/12/1989
• Issued: 02/13/1990
• Est. Priority Date: 03/20/1987
• Status: Expired due to Term

• Current Assignee: Ushio Denki
• Original Assignee: Ushio Denki
• Inventors: Suzuki, Hiroko, Suzuki, Shinji, Arai, Tetsuji
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US07/336,268
• Time in Patent Office: 307 Days
• Field of Search: 250/492.2, 250/492.1, 250/453.1
• US Class Current: 250/492.2
• CPC Class Codes: G03F 7/2024 of the already developed image

Abstract

A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.

Claims

1. An apparatus for treating a developed positive photoresist image on a semiconductor wafer comprising:

an ultraviolet radiation source composed of a metal vapor lamp or a metal halide vapor lamp and a mirror;

a treating chamber having;

a window to permit the radiant light from said ultraviolet radiation source to pass into said treating chamber;

an intake to permit inactive gas to be drawn into said treating chamber;

an exhaust hole to permit said inactive gas to be exhausted from said treating chamber;

a porous plate placed within said treating chamber to separate said window and said intake from said exhaust hole;

a support for a semiconductor wafer having a developed positive photoresist image thereon provided with temperature control mechanism within said treating chamber;

wherein the radiant light is projected to a developed positive photoresist image on a semiconductor wafer through a window and a porous plate and wherein inactive gas is directed from an intake to an exhaust hole through a porous plate.