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Epitaxial substrate for high-intensity led, and method of manufacturing same

  • US 4,902,356 A
  • Filed: 01/19/1989
  • Issued: 02/20/1990
  • Est. Priority Date: 01/21/1988
  • Status: Expired due to Term
First Claim
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1. An epitaxial substate for a high-intensity LED, comprising:

  • a double-hetero structure epitaxial layer formed by vapor phase epitaxy; and

    an epitaxial layer formed by liquid phase epitaxy on said double-hetero structure epitaxial layer;

    said double-hetero structure epitaxial layer being formed by removing a compound semiconductor substrate after said double-hetero structure epitaxial layer has been formed thereon.

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