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Sloped contact etch process

  • US 4,902,377 A
  • Filed: 05/23/1989
  • Issued: 02/20/1990
  • Est. Priority Date: 05/23/1989
  • Status: Expired due to Fees
First Claim
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1. A method for making electrical contact between a first conductive layer and a second conductive layer of a semiconductor device wherein an insulating layer separates the first conductive layer and the second conductive layer, the method comprising the steps of:

  • forming a masking film with a predetermined pattern on the surface of the insulating layer;

    isotropically etching a portion of the insulating layer exposed by the pattern;

    anisotropically etching the exposed portion of the insulating layer using the masking film as a mask;

    completing removal of the exposed portion of the insulating layer, thus exposing a portion of the first conductive layer, by repeating the steps of isotropically etching the masking film in a horizontal direction and anisotropically etching the insulating layer in a vertical direction;

    removing the masking film; and

    forming the second conductive layer on top of the insulating layer in electrical contact with the first conductive layer.

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