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Differential sense amplifier circuit for high speed ROMS, and flash memory devices

  • US 4,903,237 A
  • Filed: 08/02/1988
  • Issued: 02/20/1990
  • Est. Priority Date: 08/02/1988
  • Status: Expired due to Term
First Claim
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1. A memory circuit comprising:

  • at least one memory cell for storing data;

    means for providing a data signal corresponding to the data stored in said memory cell;

    means for providing a reference voltage;

    first sense amplifier means having an output lead, an inverting input lead receiving said reference voltage and a noninverting input lead receiving said data signal;

    second sense amplifier means having an output lead, noninverting input lead receiving said reference voltage, and an inverting input lead receiving said data signal;

    a memory circuit output lead;

    first means for coupling said memory circuit output lead to a first voltage in response to the signal on said output lead of said first sense amplifier means; and

    second means for coupling said memory circuit output lead to a second voltage in response to the signal on said output lead of said second sense amplifier means.

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