Differential sense amplifier circuit for high speed ROMS, and flash memory devices
First Claim
1. A memory circuit comprising:
- at least one memory cell for storing data;
means for providing a data signal corresponding to the data stored in said memory cell;
means for providing a reference voltage;
first sense amplifier means having an output lead, an inverting input lead receiving said reference voltage and a noninverting input lead receiving said data signal;
second sense amplifier means having an output lead, noninverting input lead receiving said reference voltage, and an inverting input lead receiving said data signal;
a memory circuit output lead;
first means for coupling said memory circuit output lead to a first voltage in response to the signal on said output lead of said first sense amplifier means; and
second means for coupling said memory circuit output lead to a second voltage in response to the signal on said output lead of said second sense amplifier means.
3 Assignments
0 Petitions
Accused Products
Abstract
A circuit senses the state of an EPROM cell transistor and drives an output lead in response thereto. The circuit comprises first and second sense amplifiers, each having inverting and noninverting input leads. The circuit also comprises a reference voltage lead coupled to the inverting lead of the first sense amplifier and the noninverting lead of the second sense amplifier. An EPROM cell transistor is connected to the noninverting lead of the first sense amplifier and the inverting lead of the second sense amplifier. The first sense amplifier is coupled to a first portion of a buffer circuit which couples the output lead to a VCC supply lead, while the second sense amplifier drives a second portion of a buffer circuit which coupled the output lead to ground.
-
Citations
6 Claims
-
1. A memory circuit comprising:
-
at least one memory cell for storing data; means for providing a data signal corresponding to the data stored in said memory cell; means for providing a reference voltage; first sense amplifier means having an output lead, an inverting input lead receiving said reference voltage and a noninverting input lead receiving said data signal; second sense amplifier means having an output lead, noninverting input lead receiving said reference voltage, and an inverting input lead receiving said data signal; a memory circuit output lead; first means for coupling said memory circuit output lead to a first voltage in response to the signal on said output lead of said first sense amplifier means; and second means for coupling said memory circuit output lead to a second voltage in response to the signal on said output lead of said second sense amplifier means. - View Dependent Claims (2, 3, 6)
-
-
4. A memory circuit comprising:
-
an array of floating gate transistors; a plurality of sense amplifiers, each sense amplifier being associated with a group of floating gate transistors within said array, each sense amplifier including first and second leads; decode means for selectively coupling one of said floating gate transistors within one of said groups to the first lead of said sense amplifier associated with said group; and a plurality of reference voltage generators, each being associated with one of said sense amplifiers and each providing a reference voltage on the second lead of said associated sense amplifier. - View Dependent Claims (5)
-
Specification