Formation of large grain polycrystalline films

• US 4,904,611 A
• Filed: 11/25/1988
• Issued: 02/27/1990
• Est. Priority Date: 09/18/1987
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Wu, I-Wei, Huang, Tiao-Yuan, Chiang, Anne
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US07/277,432
• Time in Patent Office: 459 Days
• Field of Search: 437/21, 437/24, 437/46, 148/DIG. 132
• US Class Current: 438/479
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: Y10S 148/132 Recoil implantation

Abstract

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.

Claims

1. A method for forming large grain polycrystalline films comprising the steps of

providing a layer of insulating material,

depositing a layer of amorphous semiconductor material upon said layer of insulating material to form a composite structure,

implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing enough atoms from said layer of insulating material to recoil into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains, and

annealing said composite structure at a temperature and at a steady state at which the suppression of the rate of nucleation by said implantation in said amorphous layer is more than the suppression of the rate of grain growth by said implantation in said amorphous layer, whereby random nucleation occurs within said amorphous layer to form a large grain polycrystalline film at saturation of grain growth.

2. The method of claim 1 wherein said amorphous semiconductor material is elemental and said ion species is of the same element as said amorphous semiconductor material.

3. The method of claim 2 wherein said amorphous semiconductor material is silicon.

4. The method of claim 1 wherein said ion species is of a different element than said amorphous semiconductor material in order to dope said semiconductor material.

5. The method of claim 1 wherein said layer of insulating material comprises silicon dioxide and said implanting step causes oxygen to recoil across the interface from said insulating material into said amorphous layer.

6. The method of claim 1 wherein said layer of insulating material comprises silicon nitride and said implanting step causes nitrogen to recoil across the interface from said insulating material into said amorphous layer.

7. A method for forming large grain polycrystalline films comprising the steps of

providing a layer of insulating material,

depositing a layer of amorphous semiconductor material upon said layer of insulating material to form a composite structure having an interface between said semiconductor material and said layer of insulating material,

implanting an ion species into said composite structure at an implant energy and dosage sufficient to cause the maximum kinetic energy of said implantation to be deposited substantially at said interface for the purpose of disrupting said interface by causing enough atoms from said insulating material to recoil into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains, and

annealing said composite structure at a temperature and at a steady state at which the suppression of the rate of nucleation by said implantation in said amorphous layer is more than the suppression of the rate of grain growth by said implantation in said amorphous layer, whereby random nucleation occurs within said amorphous layer to form a large grain polycrystalline film at saturation of grain growth.

8. The method of claim 7 wherein said amorphous semiconductor material is elemental and said ion species is of the same element as said amorphous semiconductor material.

9. The method of claim 8 wherein said amorphous semiconductor material is silicon.

10. The method of claim 7 wherein said ion species is of a different element than said amorphous semiconductor material in order to dope said semiconductor material.

11. The method of claim 7 wherein said layer of insulating material comprises silicon dioxide and said implanting step causes oxygen to recoil across the interface from said insulating material into said amorphous layer.

12. The method of claim 7 wherein said layer of insulating material comprises silicon nitride and said implanting step causes nitrogen to recoil across the interface from said insulating material into said amorphous layer.

13. A method for forming large grain polycrystalline films comprising the steps of

providing a layer of insulating material,

depositing a layer of amorphous semiconductor material upon said insulating material to form a composite structure,

implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing recoil of atoms from said insulating material into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains when said composite structure is annealed, and

annealing said composite structure at a temperature and at a steady state so as to cause random nucleation within said amorphous layer and to form a large grain polycrystalline film at saturation of grain growth within said amorphous layer.

14. The method of claim 13 wherein said amorphous semiconductor material is elemental and said ion species is of the same element as said amorphous semiconductor material.

15. The method of claim 14 wherein said amorphous semiconductor material is silicon.

16. The method of claim 13 wherein said ion species is of a different element than said amorphous semiconductor material in order to dope said semiconductor material.

17. The method of claim 13 wherein said layer of insulating material comprises silicon dioxide and said implanting step causes oxygen to recoil across the interface from said insulating material into said amorphous layer.

18. The method of claim 13 wherein said layer of insulating material comprises silicon nitride and said implanting step causes nitrogen to recoil across the interface from said insulating material into said amorphous layer.