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Formation of large grain polycrystalline films

  • US 4,904,611 A
  • Filed: 11/25/1988
  • Issued: 02/27/1990
  • Est. Priority Date: 09/18/1987
  • Status: Expired due to Term
First Claim
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1. A method for forming large grain polycrystalline films comprising the steps ofproviding a layer of insulating material,depositing a layer of amorphous semiconductor material upon said layer of insulating material to form a composite structure,implanting an ion species into said composite structure at an implant energy and dosage so that the projected range of implantation is in the vicinity of the interface between said amorphous layer and said layer of insulating material so as to disrupt said interface by causing enough atoms from said layer of insulating material to recoil into said amorphous layer so that said amorphous layer will be energetically less favorable to nucleate and to grow grains, andannealing said composite structure at a temperature and at a steady state at which the suppression of the rate of nucleation by said implantation in said amorphous layer is more than the suppression of the rate of grain growth by said implantation in said amorphous layer, whereby random nucleation occurs within said amorphous layer to form a large grain polycrystalline film at saturation of grain growth.

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