X-ray imaging system and solid state detector therefor

• US 4,905,265 A
• Filed: 02/01/1988
• Issued: 02/27/1990
• Est. Priority Date: 12/11/1985
• Status: Expired due to Fees

• Current Assignee: General Imaging Company
• Original Assignee: General Imaging Company
• Inventors: Jacobs, Alan M., Cox, John D., Scott, Stephen A., Juang, Yi-Shung
• Primary Examiner(s): Church, Craig E.
• Application Number:
  US07/151,235
• Time in Patent Office: 757 Days
• Field of Search: 250/370.09, 378/99, 378/19, 358/111, 358/213
• US Class Current: 378/98.8
• CPC Class Codes: G01T 1/2928 using solid state detectors
• CPC Class Codes: H01L 27/14661 of the hybrid type
• CPC Class Codes: H04N 23/30 for generating image signals from X-rays
• CPC Class Codes: H04N 25/30 for transforming X-rays into image signals
• CPC Class Codes: H04N 5/32 Transforming X-rays cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30

Abstract

The x-ray imaging system comprises an x-ray source for producing an x-ray beam and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. A circuit is provided for placing a charge on the charge storage devices and the integrated circuit is disposed in an x-ray permeable material. The detector is positioned in an x-ray beam such that the charge is dissipated by secondary radiation produced by interaction between the x-ray beam and the silicon substrate of the integrated circuit.

Claims

1. An x-ray imaging system comprising:

an x-ray source for producing an x-ray field having sufficient energy such that compton scattering and pair production have a higher combined probability of producing free electrons in silicon than the photoelectric effect; and

an x-ray detector comprising a solid state device having a plurality of layers, one of said layers including a semiconductor material with a plurality of charge storage devices, said detector having an extra absorber material for the purpose of enhancing x-ray absorption, said extra absorber material being exposed to said x-ray field to produce free electrons and being positioned sufficiently close to said semiconductor material to permit said free electrons to interact with said charge storage devices.

2. An x-ray imaging system as claimed in claim 1 wherein said detector is placed between said source and an object to be viewed such that said x-ray field passes through said detector, impinges on said object and forms an image of said object in said detector by back scatter from said object.

3. An x-ray system as claimed in claim 2 including means for subtracting an image of said source from the image produced in said detector.

4. An x-ray imaging system as claimed in claim 1 wherein said detector comprises a thin film device and wherein another of said layers comprises preprocessor circuitry connected to said charge storage devices.

5. An x-ray imaging system as claimed in claim 1 including a support housing for said detector, said support housing having means for removably receiving said detector.

6. An x-ray imaging system as claimed in claim 1 wherein said charge storage devices are part of a dynamic random access memory.

7. An x-ray imaging system as claimed in claim 1 including means for normalizing the soak times required for discharging all of the charge storage devices which are intended to discharge simultaneously.

8. An x-ray imaging system as claimed in claim 7 wherein said normalization means comprises means for storing a different normalizing factor for each of said charge storage devices.

9. An x-ray imaging system as claimed in claim 1 wherein each said charge storage device forms a single pixel of an image formed on said detector.

10. An x-ray imaging system as claimed in claim 1 including an interconnection layer for providing external connections to said detector, said interconnection layer being separate from said layer containing said charge storage devices.

11. An x-ray imaging system as claimed in claim 4 including an interconnection layer for providing external connections to said preprocessors, said interconnection layer being between said layer containing said charge storage devices and said layer containing said preprocessors.

12. An x-ray imaging system as claimed in claim 1 including means for reading analog voltages from said charge storage devices.

13. An x-ray imaging system as claimed in claim 1 wherein said extra absorber material is on one side of said layer containing said charge storage devices and a metallization layer is on an opposite side of said layer containing said charge storage devices.

14. An x-ray imaging system as claimed in claim 1 wherein said detector is an integrated circuit and the absorber material is a metallization layer of the integrated circuit.

15. An x-ray imaging system as claimed in claim 1 wherein each of said charge storage devices is at least about 50 microns on a side.

16. An x-ray imaging system as claimed in claim 1 wherein said x-ray detector is about 14 inches by 17 inches.

17. An x-ray imaging system as claimed in claim 16 wherein each charge storage device is arranged in a basic cell about 0.1 mm square.

18. An x-ray imaging system as claimed in claim 1 wherein said extra absorber material comprises an increased thickness gate oxide layer.

19. An x-ray imaging system as claimed in claim 1 wherein said detector is a dynamic random access device in which charges are stored on each of said charge storage devices and dissipated by free electrons resulting from said x-ray field.

20. An x-ray imaging system comprising:

an x-ray source for producing an x-ray field having an energy level sufficiently high that compton scattering and pair production have a higher combined probability of producing free electrons in silicon than the photoelectric effect;

an x-ray detector comprising a solid state integrated random access circuit having a semiconductor substrate, a plurality of charge storage devices, and circuit means including a plurality of conductor lines for randomly accessing each of said charge storage devices, said detector being positioned to be exposed to said x-ray field such that charges on said charge storage devices are affected by free electrons produced by said x-ray field; and

means for sensing a charge on each of said charge storage devices through said circuit means.

21. An x-ray imaging system as claimed in claim 20 wherein said detector is placed between said source and an object to be imaged such that said x-ray field passes through said detector, impinges on said object and forms an image of said object in said detector by back scatter from said object.

22. An x-ray system as claimed in claim 21 including means for subtracting an image of said source from the image produced in said detector.

23. An x-ray imaging system as claimed in claim 20 wherein said charge storage devices are divided into groups to form pixels, each pixel having a plurality of charge storage devices and means for varying the sensitivity of said charge storage devices in a single pixel to provide a gray scale.

24. An x-ray imaging system as claimed in claim 20 including a support housing for said detector, said support housing having means for removably receiving said detector.

25. An x-ray imaging system as claimed in claim 24 wherein said detector has a thickness on the order of 1/2 mm.

26. An x-ray imaging system as claimed in claim 20 wherein each of said charge storage devices is contained within a cell having a greatest dimension of approximately 10 microns.

27. An x-ray imaging system as claimed in claim 20 wherein said integrated circuit comprises a dynamic random access memory circuit including at least one sense amplifier for comparing the charge of said charge storage devices to a threshold value, and including means external to said integrated circuit for supplying said threshold value to said integrated circuit.

28. An x-ray imaging system as claimed in claim 20 wherein said circuit means comprises transistors for connecting said charge storage devices to a voltage source.

29. An x-ray imaging system as claimed in claim 20 including means for moving one of said x-ray source and said detector relative to the other by a distance approximating the distance between charge storage devices in said detector.

30. An x-ray imaging system as claimed in claim 20 including means for normalizing the soak times required for discharging all of the charge storage devices which are intended to discharge simultaneously.

31. An x-ray imaging system as claimed in claim 30 wherein said normalization means comprises means for storing a different normalizing factor for each of said cells.

32. An x-ray imaging system as claimed in claim 20 including a plurality of x-ray detectors positioned over one another such that the cells of each x-ray detector are staggered with the cells of the other x-ray detectors such that any one cell of any one x-ray detector is positioned between two cells of another x-ray detector.

33. An x-ray imaging system as claimed in claim 20 including means for exposing the detector to said source for sequential lengths of time to produce a plurality of images, and adding said images together to provide a gray scale.

34. An x-ray imaging system as claimed in claim 33 wherein the intervals between said sequential exposure times are assigned different gray scale values.

35. An x-ray imaging system as claimed in claim 23 wherein said varying means comprises different thickness oxide layers in said charge storage devices.

36. An x-ray imaging system as claimed in claim 23 wherein said varying means comprises different comparison voltage levels for determining the charge on said charge storage devices.

37. An x-ray imaging system as claimed in claim 20 wherein each said charge storage device forms a single pixel of an image formed on said detector.

38. A method of detecting an x-ray image comprising:

storing charges on a plurality of charge storage devices formed in a random access integrated circuit;

producing an x-ray field having an energy level sufficiently high that compton scattering and pair production have a combined probability of producing free electrons in silicon greater than the photoelectric effect;

exposing an object to be imaged to said x-ray field;

exposing said integrated circuit to the x-ray field from said object such that said x-ray field interacts with said integrated circuit to produce said free electrons to reduce the charge on said charge storage devices; and

sensing the charge on said charge storage devices.

39. A method according to claim 38 including producing an image having a gray scale by sequentially exposing said integrated circuit with different exposure times and digitally adding the images obtained at each of said exposure times.

40. A method according to claim 38 comprising producing a back scattered image by positioning said integrated circuit between said source and an object to be viewed, causing said x-ray field to pass through said integrated circuit and forming an image in said integrated circuit through back scattering from said object.

41. A method according to claim 38 including normalizing the outputs from said charge storage devices to compensate for different sensitivities of said charge storage devices.