Semiconductor device

• US 4,908,694 A
• Filed: 12/20/1983
• Issued: 03/13/1990
• Est. Priority Date: 04/30/1982
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Hidaka, Norio, Yamamura, Shigeyuki, Fukuta, Masumi
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Wise, Robert E.
• Application Number:
  US06/571,542
• Time in Patent Office: 2,275 Days
• Field of Search: 357/74, 357/80
• US Class Current: 257/664
• CPC Class Codes: H01L 2223/6622 Coaxial feed-throughs in active or passive substrates
• CPC Class Codes: H01L 23/49844 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/15173 in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive layer thereon. The insulator base and the conductive layer are integrated with the insulator base and the combination is insertingly engaged with the through-passage of the metal base. A semiconductor element is fixed in the metal case, in which a pseudo-coaxial line structure is formed by the conductive layer, the insulator base, the insulator bridge and the metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

Claims

1. A device for an electronic device, comprising:

a solid metal base having a solid metal case and a throughpassage connecting the inside and outside of said metal case, the metal case for accommodating the electronic device;

an electric terminal in the through hole, said electric terminal comprising;

an insulator base having a planar surface;

a strip line conductor layer formed on the planar surface of said insulator base; and

an insulator piece abutting part of the planar surface of said insulator base, an upper surface of said strip line conductor layer being exposed on both sides of said insulator piece and the exposed portion being provided on the inside and outside of said metal case, and the electronic device being connectable to the exposed portion of said strip line conductor on the inside of said metal case.

2. A semiconductor device according to claim 1, wherein a pseudo-coaxial line is formed comprising said conductive layer, said insulator base, said insulator bridge and said metal case.

3. A semiconductor device according to claim 1, wherein said insulator base and said insulator bridge comprise a ceramic material.

4. (THREE TIMES AMENDED) A semiconductor package for an electronic device, comprising:

a solid metal case for holding the electronic device and having a through hole; and

a laminated electric terminal in the through hole, said laminated electric terminal comprising;

an insulator base having a planar surface;

a strip line conductor layer formed on the planar surface of said insulator base; and

an insulator piece abutting part of the planar surface of said insulator base and said strip line conductor layer, an upper surface of said strip line conductor layer being exposed on both sides of said insulator piece and the exposed portion being provided on the inside and outside of said metal case, and the electronic device being connectable to the exposed portion of said strip line conductor on the inside of said metal case.

5. A semiconductor package according to claim 4, further comprising a metal film deposited on the outside of said laminated electric terminal.

6. A semiconductor device, comprising:

a semiconductor element;

a solid metal base having a solid metal case and a throughpassage connecting the inside and outside of said metal case, the metal case for accommodating said semiconductor element;

an electric terminal in the through hole, said electric terminal comprising;

an insulator base having a planar surface;

a strip line conductor layer formed on the planar surface of said insulator base; and

an insulator piece abutting part of the planar surface of said insulator base, an upper surface of said strip line conductor layer being exposed on both sides of said insulator piece and the exposed portion being provided on the inside and outside of said metal case, and said semiconductor element being connected to the exposed portion of said strip line conductor on the inside of said metal case.

7. A semiconductor package, comprising:

a semiconductor element;

a solid metal case for holding said semiconductor element and having a through hole; and

a laminated electric terminal in the through hole, said laminated electric terminal comprising;

an insulator base having a planar surface;

a strip line conductor layer formed on the planar surface of said insulator base; and

an insulator piece abutting part of the planar surface of said insulator base and said strip line conductor layer, an upper surface of said strip line conductor layer being exposed on both sides of said insulator piece and the exposed portion being provided on the inside and outside of said metal case, and said semiconductor element being connected to the exposed portion of said strip line conductor on the inside of said metal case.