Method of producing semiconductor device
First Claim
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1. A method of producing a semiconductor device comprising the steps of:
- forming a copper metallization film on a surface of a substrate;
patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and
depositing an insulating film over said surface of the substrate and on said patterned metallization film at a temperature which is lower than an oxidation temperature of copper.
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Abstract
A method of producing a semiconductor device includes the steps of forming a metallization film including copper on a surface of a substrate, and depositing an insulating film on a surface of the metallization film at a temperature which is below the oxidation temperature of copper.
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Citations
15 Claims
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1. A method of producing a semiconductor device comprising the steps of:
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forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film at a temperature which is lower than an oxidation temperature of copper. - View Dependent Claims (2, 3)
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4. A method of producing a semiconductor device comprising the steps of:
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forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a radio frequency sputtering process at a temperature less than the oxidation temperature of copper. - View Dependent Claims (5, 6, 7)
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8. A method of producing a semiconductor device comprising the steps of:
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forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by an electron cyclotron resonance plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper. - View Dependent Claims (9, 10, 11)
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12. A method of producing a semiconductor device comprising the steps of:
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forming a copper metallization film on a surface of a substrate; patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and depositing an insulating film over said surface of the substrate and on said patterned metallization film by a plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper. - View Dependent Claims (13, 14, 15)
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Specification