Method of producing semiconductor device

• US 4,910,169 A
• Filed: 09/17/1987
• Issued: 03/20/1990
• Est. Priority Date: 09/17/1986
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Hoshino, Kazuhiro
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Griffis, Andrew
• Application Number:
  US07/097,739
• Time in Patent Office: 915 Days
• Field of Search: 437/198, 437/230, 437/195, 437/235, 437/189, 437/241, 357/67, 427/38, 427/39
• US Class Current: 438/660
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
• CPC Class Codes: H01L 23/53233 Copper alloys
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of producing a semiconductor device includes the steps of forming a metallization film including copper on a surface of a substrate, and depositing an insulating film on a surface of the metallization film at a temperature which is below the oxidation temperature of copper.

Claims

1. A method of producing a semiconductor device comprising the steps of:

forming a copper metallization film on a surface of a substrate;

patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and

depositing an insulating film over said surface of the substrate and on said patterned metallization film at a temperature which is lower than an oxidation temperature of copper.

2. A method of producing a semiconductor device as claimed in claim 1, wherein the temperature at said depositing step is 200°

C. or lower.

3. A method of producing a semiconductor device as claimed in claim 1, further comprising the steps of:

annealing said semiconductor device after depositing the insulating film.

4. A method of producing a semiconductor device comprising the steps of:

forming a copper metallization film on a surface of a substrate;

patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and

depositing an insulating film over said surface of the substrate and on said patterned metallization film by a radio frequency sputtering process at a temperature less than the oxidation temperature of copper.

5. A method of producing a semiconductor device as claimed in claim 4, wherein said radio frequency sputtering process is carried out at a temperature which is less than or equal to 200°

C.

6. A method of producing a semiconductor device as claimed in claim 4, wherein said insulating film is made of a material selected from the group consisting of silicon dioxide, phosphor-silicate glass and silicon nitride.

7. A method of producing a semiconductor device as claimed in claim 4, wherein said method further comprises the step of annealing said semiconductor device after depositing the insulating film.

8. A method of producing a semiconductor device comprising the steps of:

forming a copper metallization film on a surface of a substrate;

patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and

depositing an insulating film over said surface of the substrate and on said patterned metallization film by an electron cyclotron resonance plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.

9. A method of producing a semiconductor device as claimed in claim 8, wherein said electron cyclotron resonance plasma-assisted chemical vapor deposition process is carried out at a temperature which is less than or equal to 200°

C.

10. A method of producing a semiconductor device as claimed in claim 8, wherein said insulating film is made of a material selected from the group consisting of silicon nitride and silicon dioxide.

11. A method of producing a semiconductor device as claimed in claim 8, further comprising the step of annealing said semiconductor device after depositing the insulating film.

12. A method of producing a semiconductor device comprising the steps of:

forming a copper metallization film on a surface of a substrate;

patterning said copper metallization film so as to obtain a patterned metallization film having a predetermined pattern; and

depositing an insulating film over said surface of the substrate and on said patterned metallization film by a plasma-assisted chemical vapor deposition process at a temperature less than the oxidation temperature of copper.

13. A method of producing a semiconductor device as claimed in claim 12, wherein said plasma-assisted chemical vapor deposition process is carried out at a temperature which is less than or equal to 200°

C.

14. A method of producing a semiconductor device as claimed in claim 12, wherein said insulating film is made of a material selected from the group consisting of silicon oxide, phosphor-silicate glass and silicon nitride.

15. A method of producing a semiconductor device as claimed in claim 12, further comprising the step of annealing said semiconductor device after depositing the insulating film.