Semiconductor device having a metal electrode interconnection film with two layers of silicide

• US 4,910,578 A
• Filed: 02/11/1988
• Issued: 03/20/1990
• Est. Priority Date: 06/25/1985
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Okamoto, Tatsuo
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Jackson, Jr., Jerome
• Application Number:
  US07/159,401
• Time in Patent Office: 768 Days
• Field of Search: 357/71, 357/67
• US Class Current: 257/757
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device comprises a silicon substrate (1) formed with impurity diffusion layers (5, 9) in a region defined by insulating films (2a, 2b) for separating elements and an aluminum alloy film (11) for electrode interconnection having a contact hole portion 7 whose bottom is electrically in contact with the impurity diffusion layers (5, 9). A titanium silicide (TiSi₂) film (4) is deposited on the surfaces of the impurity diffusion layers (5, 9) to reduce sheet resistivity thereof as well as reduce contact resistance between the same and the aluminum alloy film (11). A molybdenum silicide (MoSi₂) film (8) is further formed thereon to prevent the TiSi₂ film (4) from corrosion in removal of an oxide film through etching, while a titanium nitride (TiN) film (10) is formed thereon to prevent thermal reaction of the aluminum alloy film (11) and the MoSi₂ film (8).

Claims

1. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed at least on said one part of the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film including an upper silicide layer of MoSi₂ and a lower silicide layer of Mo, Ti and Si; and

a TiN barrier film formed between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.

3. A semiconductor device in accordance with claim 1, wherein the refractory metal silicide film is formed on the entire impurity diffusion layer.

2. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed at least on said one part of the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film including an upper silicide layer of MoSi₂, a middle silicide layer of Mo, Ti and Si, and a lower silicide layer of TiSi₂ ; and

a TiN barrier film formed between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.

4. A semiconductor device in accordance with claim 2, wherein the refractory metal silicide film is formed on the entire impurity diffusion layer.

5. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed at least on said one part of the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film including an upper silicide layer or WSi₂ and a lower silicide layer of W, Ti and Si; and

a TiN barrier film formed between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.

7. A semiconductor device in accordance with claim 5, wherein the refractory metal silicide film is formed on the entire impurity diffusion layer.

6. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed at least on said one part of the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film including an upper silicide layer of WSi₂, a middle silicide layer of W, Ti and Si, and a lower silicide layer of TiSi₂ ; and

a TiN barrier film formed between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.

8. A semiconductor device in accordance with claim 6, wherein the refractory metal silicide film is formed on the entire impurity diffusion layer.

9. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed on the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film comprising a first refractory metal silicide of low electrical resistance formed of Mo, Ti and Si on the entire impurity diffusion layer and a second refractory metal silicide having resistance to corrosion by hydrofluoric acid formed of MoSi₂ on said one part of the impurity diffusion layer in a self-aligning manner; and

a barrier film formed of TiN between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.

10. A semiconductor device comprising:

a semiconductor substrate formed with an impurity diffusion layer as an electrode region;

a metal electrode interconnection film having a contact hole portion selectively formed over one part of said impurity diffusion layer, said one part having a greater depth as compared with a remaining part of said impurity diffusion layer;

a refractory metal silicide film formed on the impurity diffusion layer, said refractory metal silicide film having relatively low electrical resistance and sufficient resistance to corrosion by hydrofluoric acid, said refractory metal silicide film comprising a first refractory metal silicide of low electrical resistance formed of W, Ti and Si on the entire impurity diffusion layer and a second refractory metal silicide having resistance to corrosion by hydrofluoric acid formed of WSi₂ on said one part of the impurity diffusion layer in a self-aligning manner; and

a barrier film formed of TiN between said refractory metal silicide film and said metal electrode interconnection film for coupling said refractory metal silicide film with said metal electrode interconnection film.