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Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator

  • US 4,912,066 A
  • Filed: 03/07/1988
  • Issued: 03/27/1990
  • Est. Priority Date: 07/18/1984
  • Status: Expired due to Term
First Claim
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1. A method of making and programming a laser-beam programmable device at a face of a semiconductor body, comprising:

  • forming a first conductive layer over a portion of said face;

    forming a second conductive layer over a portion of said face, said second conductive layer not touching said first conductive layer;

    forming an insulating layer over a first target area of said first conductive strip and a second target area of said second conductive strip;

    forming a conductive strip over said first and second target areas; and

    exposing said first and second target areas to a laser beam, said first and second target areas lying within the area of said laser beam, said insulating layer being altered by the laser beam to create a conductive path from said first conductive layer through said conductive strip to said second conductive layer;

    wherein said first and second conductive layers, and said conductive strip, are formed of materials different from one another.

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