End face light emitting element

• US 4,912,533 A
• Filed: 10/09/1987
• Issued: 03/27/1990
• Est. Priority Date: 10/09/1986
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Takahashi, Shogo
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/106,461
• Time in Patent Office: 900 Days
• Field of Search: 357/17, 357/16, 357/19, 357/55, 357/56, 357/30 E, 333/247, 333/249, 333/248
• US Class Current: 257/94
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01S 5/10 Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence
• CPC Class Codes: H01S 5/1021 Coupled cavities H01S5/14 takes precedence
• CPC Class Codes: H01S 5/2068 obtained by radiation treatment or annealing

Abstract

An end face light emitting element having a light emitting region on a semiconductor substrate to emit light from the end face thereof has a light waveguide layer between the light emitting region and the substrate with the light emitting region deformed like a staircase having at least two steps.

Claims

1. An end face light emitting element, comprising:

a semiconductor substrate, the major surface of said substrate having a first portion and a second portion which is different from the first portion;

a light waveguide layer only formed on the first portion of the major surface of said semiconductor substrate; and

a light emitting region formed on the second portion of the major surface of said semiconductor substrate and formed on said light waveguide layer so that said light emitting region forms a staircase configuration having at least two steps and so that said light waveguide layer and said light emitting region are light emitting at an end face of the end face light emitting element.

2. The end face light emitting element according to claim 1, wherein the end face of said light emitting element is adapted to output light beams from said at least two steps, the outputted light beams being adjacent to one another.

3. The end face light emitting element according to claim 1, wherein the surface of said light waveguide layer is substantially planar, and wherein said light emitting region forms a staircase configuration having two steps.

4. The end face light emitting element according to claim 1, wherein said light emitting region comprises:

a first clad layer of a first conductivity type formed on said light waveguide layer and on the second portion of said semiconductor substrate;

an active layer of a second conductivity type formed on said first clad layer; and

a second clad layer of the second conductivity type formed on said active layer.

5. The end face light emitting element according to claim 4, wherein said light emitting region further comprises a cap layer of the second conductivity type formed on said second clad layer.

6. The end face light emitting element according to claim 5, further including an electrode formed on the surface of said cap layer and an insulating film formed on that portion of the surface of said cap layer not including the electrode.