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Image sensing array with charge isolation

  • US 4,912,537 A
  • Filed: 06/24/1988
  • Issued: 03/27/1990
  • Est. Priority Date: 06/24/1988
  • Status: Expired due to Term
First Claim
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1. A solid state light sensing element comprising:

  • a semiconductor substrate of a first select conductivity type having a first select region of ion implantation, and a second select region of a second select conductivity type opposite to said first select conductivity type spaced apart from said first region and cooperatively associated with said substrate in a manner defining a diode;

    means for receiving light and converting the photons of the received light to signal charges; and

    semiconductor gating means operatively associated with said substrate and said converting means for controlling the flow of signal charges from said converting means to said diode, said grating means comprising a gate control electrode extending over said first ion implanted region of said substrate such that upon energization of said gate electrode to a first select potential, said gating means operates to conduct signal charges from said converting means to said diode and said gate control electrode operates to establish a first potential well region in said first ion implanted region underlying said gate control electrode and extending to said second region, said first potential well being deepest in the region immediately underlying said gate control electrode so as to cause charges from said diode to enter said deepest portion of said first potential well region, and such that upon energization of said gate control electrode to a second select potential below said first potential wherein said gating means operates to discontinue the conduction of signal charges from said converting means to said diode and said gate control electrode operates to establish a second potential well region in said first ion implanted region of less depth than said first potential well region so as to isolate the signal charges held therein.

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