Thermal/microwave remote plasma multiprocessing reactor and method of use
First Claim
1. A rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprisinga vacuum chamber including top, bottom and side walls,means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber,at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber,heating means mounted facing said wafer mount for heating said back side of said wafer, andat least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber.
1 Assignment
0 Petitions
Accused Products
Abstract
A novel cold wall single wafer rapid thermal/microwave remote plasma multiprocessing reactor comprising a vacuum chamber having means for mounting a wafer in the chamber, means for providing optical flux mounted adjacent one wall facing the back side of the wafer for optical heating of the wafer, and ports for plasma injection such that remote plasma can be generated and pumped into the chamber. Ports are provided for gas injection both through the plasma generating chamber and for non-plasma injection. The plasma and non-plasma ports are connected through separate manifolds to a plurality of gas sources. The comprehensive reactor design is such that several wafer processing steps can be done sequentially in situ, while providing for optimization of each processing step.
-
Citations
14 Claims
-
1. A rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprising
a vacuum chamber including top, bottom and side walls, means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber, at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber, heating means mounted facing said wafer mount for heating said back side of said wafer, and at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber.
- 10. In a rapid thermal plasma multiprocessing reactor for in situ growth and deposition of layers on a wafer comprising a vacuum chamber including top, bottom and side walls, means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber, at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber, means mounted adjacent to the top surface of said chamber facing said wafer mount for heating said back side of said wafer, and at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber, a method of fabricating tungsten-gate MOS devices comprising the steps of in situ growth of a gate dielectric by rapid thermal oxidation and rapid thermal nitridation cycles followed by a non-selective tungsten deposition process to form the gate electrode.
-
12. In a rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprising
a vacuum chamber including top, bottom and side walls, means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber, at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber, heating means mounted facing said wafer mount for heating said back side of said wafer, and at least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber, a method of selectively depositing tungsten on exposed silicon areas of said wafer comprising flowing any combination of WF/H2 /Ar without plasma discharge into said vacuum chamber at temperatures up to 450°
Specification