×

Thermal/microwave remote plasma multiprocessing reactor and method of use

  • US 4,913,929 A
  • Filed: 04/21/1987
  • Issued: 04/03/1990
  • Est. Priority Date: 04/21/1987
  • Status: Expired due to Fees
First Claim
Patent Images

1. A rapid thermal plasma multiprocessing reactor for in-situ growth and deposition of layers on a wafer comprisinga vacuum chamber including top, bottom and side walls,means for supporting said wafer with a top surface of said wafer to be processed facing the bottom of said chamber,at least one quartz discharge tube mounted in said bottom of said reactor facing said wafer top surface for conveying plasma gas from a remote plasma generating chamber located outside of said vacuum chamber to said vacuum chamber,heating means mounted facing said wafer mount for heating said back side of said wafer, andat least one non-plasma injector port connected through a non-plasma manifold to a plurality of gas sources for selectively conveying gas to said chamber whereby a plurality of processes affecting said wafer may be carried out without removing said wafer from said chamber.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×