Target source for ion beam sputter deposition
First Claim
1. A sputtering apparatus comprising:
- a source of plasma disposed within a chamber and having a predetermined pattern of ion beam intensity,an intermediate target angularly disposed in relationship with said source of plasma and in angular relationship with a substrate, said target comprising a matrix of material to be deposited upon said substrate and including a plurality of bore,, said bores disposed in a predetermined radial pattern comprising an axial bore of a first predetermined diameter, a first plurality of radially disposed bores of a second predetermined diameter surrounding said axial bore, a second plurality of radially disposed bores of said first predetermined diameter surrounding said first plurality, and a third plurality of radially disposed bores surrounding said second plurality and of diameters alternating between said first predetermined diameter and said second predetermined diameter, each of said bores having an aspect ratio of between 0.1875 and 0.375 and a predetermined depth of one-half the thickness of said target, anda plurality of plugs of predetermined composition, adapted for a press fit and disposed within said bores,wherein ions are made to collide against said target so as to liberate particles of materials of which said target and said plugs are made, thereby depositing a thin homogeneous film of said particles in a further predetermined composition on said substrate.
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Accused Products
Abstract
A target for use in ion beam sputtering is arranged for varying the chemical composition of the deposited film without requiring substantial fabrication of a new target. The target is comprised of a disc having therein a plurality of openings which extend only part way through the disc. The target is fabricated from a predetermined chemical composition similar to that desired to be deposited. The openings within the target are filled with plugs of a varied chemical composition. By choice of the number of plugs and their composition, as well as the size of the plug, the structure of the film may readily be varied to a small degree or a large degree. The invention is applicable to all methods of deposition that use a target as a source of material for the film.
72 Citations
9 Claims
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1. A sputtering apparatus comprising:
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a source of plasma disposed within a chamber and having a predetermined pattern of ion beam intensity, an intermediate target angularly disposed in relationship with said source of plasma and in angular relationship with a substrate, said target comprising a matrix of material to be deposited upon said substrate and including a plurality of bore,, said bores disposed in a predetermined radial pattern comprising an axial bore of a first predetermined diameter, a first plurality of radially disposed bores of a second predetermined diameter surrounding said axial bore, a second plurality of radially disposed bores of said first predetermined diameter surrounding said first plurality, and a third plurality of radially disposed bores surrounding said second plurality and of diameters alternating between said first predetermined diameter and said second predetermined diameter, each of said bores having an aspect ratio of between 0.1875 and 0.375 and a predetermined depth of one-half the thickness of said target, and a plurality of plugs of predetermined composition, adapted for a press fit and disposed within said bores, wherein ions are made to collide against said target so as to liberate particles of materials of which said target and said plugs are made, thereby depositing a thin homogeneous film of said particles in a further predetermined composition on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification