Method of forming a diamond film

• US 4,915,977 A
• Filed: 02/25/1988
• Issued: 04/10/1990
• Est. Priority Date: 02/26/1987
• Status: Expired due to Term

• Current Assignee: Nissin Electric Company Limited
• Original Assignee: Nissin Electric Company Limited
• Inventors: Okamoto, Koji, Kamijo, Eiji, Tanjo, Masayasu
• Primary Examiner(s): Silverman, Stanley
• Application Number:
  US07/160,261
• Time in Patent Office: 775 Days
• Field of Search: 423/445, 423/446, 423/DIG. 10, 427/37, 427/34, 427/38, 427/39, 219/121.11, 219/121.15, 219/121.36, 219/121.38, 219/121.47, 204/164, 204/192.11, 204/192.12
• US Class Current: 427/580
• CPC Class Codes: C23C 14/0611 Diamond
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/04 Diamond

Abstract

A method of forming a diamond film on a substrate wherein hydrogen, a hydrocarbon series gas, an inert gas, an organic compound series gas or a mixture of such gases is introduced into a vacuum vessel to contact a substrate and carbon is evaporated by are discharge at a carbon cathode while applying a voltage to the substrate to deposit carbon on the substrate thus forming a diamond film on the substrate. A silicon series gas, a germanium series gas or a mixture thereof may be also introduced into the vessel with the foregoing gas or gases. While the carbon is being deposited on the substrate, thermoelectrons may also be supplied onto the substrate, and, further, high frequency discharge may be generated in a space between the substrate and the cathodes.

Claims

1. A method of forming a diamond film on a substrate comprising the steps of:

introducing a gas selected from the group consisting of inert gases, hydrocarbon series gases, organic compound series gases and mixtures thereof into a vacuum vessel to contact a substrate housed in said vessel; and

evaporating carbon onto said substrate by arc discharge at a carbon cathode housed in said vacuum vessel, while applying a negative bias voltage to said substrate or to a holder for holding said substrate to deposit carbon on said substrate thereby forming said diamond film.

2. A diamond film forming method according to claim 1, wherein carbon is deposited onto said substrate while thermoelectrons are being supplied onto said substrate.

3. A diamond film forming method according to claim 1, wherein carbon is deposited onto said substrate while high frequency discharge is being generated in a space between said substrate and said cathode.

4. A method of forming a diamond film on a substrate comprising the steps of:

introducing a combination of (1) a gas selected from the group consisting of inert gases, hydrocarbon series gases, organic compound series gases and mixtures thereof and (b

     2) a gas selected from the group consisting of silicon series gases, germanium series gases and mixtures thereof into a vacuum vessel to contact a substrate housed in said vessel; and

evaporating carbon onto said substrate by arc discharge at a carbon cathode housed in said vacuum vessel, while applying a negative bias voltage to said substrate or to a holder for holding said substrate to deposit carbon on said substrate thereby forming said diamond film.

5. A diamond film forming method according to claim 4, wherein carbon is deposited onto said substrate while thermoelectrons are being supplied onto said substrate.

6. A diamond film forming method according to claim 4, wherein carbon is deposited onto said substrate while a high frequency discharge is being generated in a space between said substrate and said cathode.

7. A method of forming a diamond film on a substrate comprising the steps of:

introducing a gas selected from the group consisting of inert gases, hydrocarbon series gases, organic compound series gases and mixtures thereof into a vacuum vessel to contact a substrate housed in said vessel; and

evaporating carbon onto said substrate by arc discharge at a carbon cathode housed in said vacuum vessel, while applying an AC bias voltage to said substrate or to a holder for holding said substrate to deposit carbon on said substrate thereby forming said diamond film.

8. A diamond film forming method according to claim 7, wherein carbon is deposited onto said substrate while high frequency discharge is being generated in a space between said substrate and said cathode.

9. A method of forming a diamond film on a substrate comprising the steps of:

introducing a combination of (1) a gas selected from the group consisting of inert gases, hydrocarbon series gases, organic compound series gases and mixtures thereof and (2) a gas selected from the group consisting of silicon series gases, germanium series gases and mixtures thereof into a vacuum vessel to contact a substrate housed in said vessel; and

evaporating carbon onto said substrate by arc discharge at a carbon cathode housed in said vacuum vessel, while applying an AC bias voltage to said substrate or to a holder for holding said substrate to deposit carbon on said substrate thereby forming said diamond film.

10. A diamond film forming method according to claim 9, wherein carbon is deposited onto said substrate while high frequency discharge is being generated in a space between said substrate and said cathode.