Process for the epitaxial production of semiconductor stock material

• US 4,916,089 A
• Filed: 09/02/1988
• Issued: 04/10/1990
• Est. Priority Date: 09/04/1987
• Status: Expired due to Fees

• Current Assignee: Stichting Katholieke Universiteit
• Original Assignee: Stichting Katholieke Universiteit
• Inventors: Hogenkamp, Josephus E. M., Van Suchtelen, Jaap, Giling, Lodevicus J.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Bunch, William
• Application Number:
  US07/240,784
• Time in Patent Office: 585 Days
• Field of Search: 148/DIG. 6, 148/, 148/22, 148/56, 148/57, 148/65, 148/110, 148/169, 148/715, 148/50, 156/610-614, 427/248.1, 427/252, 427/255.1, 437/81, 437/105-107, 437/108, 437/110, 437/111, 437/126, 437/133, 437/949
• US Class Current: 117/93
• CPC Class Codes: B01J 4/02 for feeding measured , i.e. prescribed quantities of reagents
• CPC Class Codes: B01L 3/0289 Apparatus for withdrawing or distributing predetermined quantities of fluid B01L3/02 takes precedence; sample taking G01N1/00; sample taking within automatic analysers G01N35/00; volume measuring in general G01F
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: F23C 15/00 Apparatus in which combustion takes place in pulses influenced by acoustic resonance in a gas mass for generating combustion products of high pressure or high velocity F23R7/00; starting devices F23D11/42
• CPC Class Codes: Y10S 148/006 Apparatus
• CPC Class Codes: Y10S 148/057 Gas flow control
• CPC Class Codes: Y10S 148/11 Metal-organic CVD, ruehrwein type
• CPC Class Codes: Y10S 148/169 Vacuum deposition, e.g. including molecular beam epitaxy
• CPC Class Codes: Y10S 438/935 Gas flow control

Abstract

In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor is conveyed to a separate gas pipette and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.

Claims

1. Process for the epitaxial production of semiconductor products or of articles provided with a layer, wherein a number of metered gases are passed into a pulsed reactor, in which reactor a decomposition of molecules, and depositions of atoms take place, characterized in that each of the said gases is fed to a separate gas pipette and thereafter the content of the gas pipette is passed cyclically, by pressure differential, into the pulsed reactor, with the composition of the mixture being changed per one or more cycles.

3. Process according to claim 1, characterized in that the component gases are mixed in a conjoint mixing chamber before being fed into the reactor.

4. Process according to claim 1, characterized in that the control range of the gas pipette is changed by adjusting the input pressure.

2. Process for the epitaxial production of semiconductor products, wherein a number of metered gases are passed into a molecular beam epitaxy reactor (MBE) in which reactor the pressure is brought to a value of ≦

about 10^-6 mbar and molecular beams are directed onto the heated substrates, characterized in that each of the said gases is fed to a separate gas pipette and subsequently the content of the gas pipette is fed, by pressure differential, cyclically into the MBE reactor, with the composition of the mixture being changed per one or more cycles.