Sagfet with buffer layers

• US 4,918,493 A
• Filed: 08/10/1988
• Issued: 04/17/1990
• Est. Priority Date: 08/10/1988
• Status: Expired due to Term

• Current Assignee: Cobham Defense Electronic Systems Corporation (Cobham PLC)
• Original Assignee: ITT Corporation (ITT, Inc.)
• Inventors: Menk, Gregory E., Sadler, Robert A., Geissberger, Arthur E., Balzan, Matthew L.
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US07/230,625
• Time in Patent Office: 615 Days
• Field of Search: 357/45 L, 357/4, 357/16, 357/60
• US Class Current: 257/22
• CPC Class Codes: H01L 29/1075 of field-effect transistors

Abstract

A composite buffer layer is formed with a layer of GaAs on a semi-insulating GaAs substrate. Next a short period superlattice is formed followed by another GaAs layer. A layer of GaAlAs is then provided such that the Ai content and no doping followed by an intrinsic GaAs layer. The intrinsic GaAs layer is the active layer which serves as a channel.

Claims

1. A composite buffer structure for GaAs semiconductor products on a GaAs substrate comprising:

a semi-insulating GaAs substrate having a first major surface on a plane oriented up to about 20 degrees towards the (1,1,1)A plane from the (1,0,0) crystalline plane;

a first layer of epitaxial GaAs directly on said first major surface;

an AlAs/GaAs superlattice directly on said first layer;

a second layer of epitaxial GaAs directly on said superlattice;

a first AlGaAs layer having a first mole fraction of Al directly on said second layer;

a second AlGaAs layer having a second mole fraction of Al directly on said first AlGaAs layer, said second mole fraction being higher than said first mole fraction;

a third layer of epitaxial GaAs directly on said second AlGaAs layer.

2. A composite buffer structure for GaAs semiconductor products on a GaAs substrate as claimed in claim 1 wherein:

said first AlGaAs layer has a compositionally graded molecular structure having a starting AlAs mole fraction adjacent said second layer and an ending AlAs mole fraction, higher than said starting AlAs mole fraction, adjacent said second AlGaAs layer.

3. A composite buffer structure for GaAs semiconductor products on a GaAs substrate as claimed in claim 1 wherein:

said AlAs/GaAs superlattice has at least 5 periods.

4. A composite buffer structure for GaAs semiconductor products on a GaAs substrate as claimed in claim 2 wherein:

said first, second and third layers of GaAs and said first and second AlGaAs layers are intrinsic layers.

5. A composite buffer structure for GaAs semiconductor products on a GaAs substrate as claimed in claim 2 wherein:

said starting AlAs mole fraction is about 0.1 and said ending AlAs mole fraction is between about 0.4 and 0.6.

6. A composite buffer structure for GaAs semiconductor products on a GaAs substrate as claimed in claim 5 wherein:

said second AlGaAs layer is between about 0.5 micrometer and 1.0 micrometer.

7. A semiconductor product including a composite buffer structure on a GaAs substrate comprising:

a semiconductor substrate having a first major surface misoriented up to about 10 degrees towards the (1,1,1) plane from the (1,0,0) plane;

a first epitaxial layer of GaAs over said substrate;

a superlattice of AlAs/GaAs over said first layer of GaAs;

a second epitaxial layer of GaAs over said superlattice;

a first AlGaAs layer over said second layer of GaAs, said first AlGaAs layer having a graded Al concentration and includes a top surface portion having a selected Al mole fraction;

a second AlGaAs layer over said first AlGaAs layer, said second AlGaAs layer having a uniform concentration of Al at said selected mole fraction;

a third layer of eiptaxial GaAs over said second AlGaAs layer.