×

Method for making high resolution silicon shadow masks

  • US 4,919,749 A
  • Filed: 05/26/1989
  • Issued: 04/24/1990
  • Est. Priority Date: 05/26/1989
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of forming a silicon shadow mask having a pattern of etched through apertures comprising the steps of:

  • (a) forming a silicon membrane having a selectively controlled predetermined stress characteristic and a thickness of less than approximately 25 microns;

    (b) applying a masking layer to an upper surface of said silicon membrane;

    (c) patterning said masking layer with a pattern corresponding to said pattern of etched through apertures;

    (d) etching away said masking layer in regions corresponding to said pattern of etched through apertures;

    (e) etching away said silicon membrane in said regions corresponding to said pattern of etched through apertures, thereby creating said etched through apertures;

    (f) removing remaining portions of said masking layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×