Method for making high resolution silicon shadow masks

• US 4,919,749 A
• Filed: 05/26/1989
• Issued: 04/24/1990
• Est. Priority Date: 05/26/1989
• Status: Expired due to Fees

• Current Assignee: Nanostructures, Inc.
• Original Assignee: Nanostructures, Inc.
• Inventors: Shimkunas, Alex R., Yen, Junling J., Mauger, Philip E.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/357,481
• Time in Patent Office: 333 Days
• Field of Search: 156/643, 156/644, 156/646, 156/651, 156/653, 156/657, 156/659.1, 156/662, 204/192.3, 204/192.32, 204/192.37, 313/402, 313/403, 313/408, 252/79.1
• US Class Current: 216/12
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A high resolution shadow mask with low pattern distortion is formed from a silicon membrane with a pattern of apertures etched through the membrane by reactive ion etching using a silicon dioxide masking layer. To achieve low distortion over a large area membrane, the stress of the membrane and the masking layer is controlled to remain within an optimal range so that the stress relief that occurs when the apertures are formed is kept negligibly small. A silicon membrane with controlled stress is made using a p/n junction electrochemical etch-stop process. After making the membrane, it is then coated with a deposited silicon dioxide layer. The stress of the oxide layer may be adjusted to an optimum value by annealing after deposition. The membrane with the oxide mask layer is next coated with a photoresist layer which is then patterned with the desired shadow mask pattern. Once the photoresist is patterned, the pattern is then transferred into the oxide layer by reactive ion etching. The patterned oxide then serves as the mask for etching apertures through the silicon membrane, also done by reactive ion etching.

Claims

1. A method of forming a silicon shadow mask having a pattern of etched through apertures comprising the steps of:

(a) forming a silicon membrane having a selectively controlled predetermined stress characteristic and a thickness of less than approximately 25 microns;

(b) applying a masking layer to an upper surface of said silicon membrane;

(c) patterning said masking layer with a pattern corresponding to said pattern of etched through apertures;

(d) etching away said masking layer in regions corresponding to said pattern of etched through apertures;

(e) etching away said silicon membrane in said regions corresponding to said pattern of etched through apertures, thereby creating said etched through apertures;

(f) removing remaining portions of said masking layer.

2. The method of claim 1 wherein said masking layer is SiO₂.

3. The method of claim 2 wherein said SiO₂ masking layer is formed by chemical vapor deposition.

4. The method of claim 2 wherein said SiO₂ masking layer is deposited by evaporation.

5. The method of claim 2 wherein said SiO₂ masking layer is deposited by sputtering.

6. The method of claim 2 further comprising the step of thermal annealing said SiO₂ masking layer.

7. The method of claim 6 wherein said SiO₂ masking layer is thermally annealed to achieve an internal tensile stress value of less than approximately 1×

10⁸ dynes/cm².

8. The method of claim 2 wherein said SiO₂ masking layer is etched away with a reactive ion etching process.

9. The method of claim 1 wherein said selectively controlled predetermined stress characteristic is an internal tensile stress value in the range of 0.5 to 3.0×

10⁸ dynes/cm².

10. The method of claim 1 wherein said masking layer is patterned with a photoresist layer.

11. The method of claim 10 further comprising the step, after the step of etching away said masking layer, of removing said photoresist layer in an oxygen plasma.

12. The method of claim 1 wherein said silicon membrane is etched away with a reactive ion etching process.

13. The method of claim 12 wherein said reactive ion etching process employs a bromine plasma.

14. The method of claim 13 wherein said bromine plasma is derived from a liquid bromine solution.

15. The method of claim 13 wherein said bromine plasma is derived from hydrogen bromide gas.

16. The method of claim 12 wherein said reactive ion etching process employs a chlorine plasma.

17. The method of claim 1 further comprising the step of metallizing said silicon membrane in regions surrounding said etched through apertures.

18. A method of forming a silicon shadow mask having a pattern of through apertures comprising the steps of:

(a) forming a silicon membrane having internal tensile stress in the range of approximately 0.5 to 3.0×

10⁸ dynes/cm² ;

(b) applying a SiO₂ masking layer to an upper surface of said silicon membrane;

(c) thermal annealing said SiO₂ masking layer to achieve an internal tensile stress of less than approximately 1×

10⁸ dynes/cm² ;

(d) removing said SiO₂ masking layer in regions corresponding to said pattern of through apertures;

(e) removing said silicon membrane in said regions corresponding to said pattern of through apertures, thereby creating said through apertures;

(f) removing remaining portions of said SiO₂ masking layer.

19. The method of claim 18 wherein said SiO₂ masking layer is formed by chemical vapor deposition.

20. The method of claim 18 wherein said SiO₂ masking layer is deposited by evaporation.

21. The method of claim 18 wherein said SiO₂ masking layer is deposited by sputtering.

22. The method of claim 18 wherein said SiO₂ masking layer is removed with a reactive ion etching process.

23. The method of claim 18 wherein said silicon membrane is removed with a reactive ion etching process.

24. The method of claim 23 wherein said reactive ion etching process employs a bromine plasma.

25. The method of claim 24 wherein said bromine plasma is derived from a liquid bromine solution.

26. The method of claim 24 wherein said bromine plasma is derived from hydrogen bromide gas.

27. The method of claim 23 wherein said reactive ion etching process employs a chlorine plasma.

28. The method of claim 18 further comprising the step of metallizing said silicon membrane in regions surrounding said through apertures.