Method of making a multilevel electrical airbridge interconnect

• US 4,920,639 A
• Filed: 08/04/1989
• Issued: 05/01/1990
• Est. Priority Date: 08/04/1989
• Status: Expired due to Term

• Current Assignee: Stovokor Technology LLC (Intellectual Ventures LLC)
• Original Assignee: Microelectronics and Computer Technology Corporation
• Inventors: Yee, Ian Y. K.
• Primary Examiner(s): Arbes, Carl J.
• Application Number:
  US07/389,845
• Time in Patent Office: 270 Days
• Field of Search: 29/846, 29/830, 174/68.5, 361/410
• US Class Current: 29/846
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/7688 by deposition over sacrificial masking layer, e.g. lift-off lift-off per se H01L21/0272
• CPC Class Codes: H01L 23/5221 Crossover interconnections
• CPC Class Codes: H01L 23/5381 Crossover interconnections, e.g. bridge stepovers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H05K 1/0272 Adaptations for fluid transport, e.g. channels, holes
• CPC Class Codes: H05K 1/03 Use of materials for the substrate
• CPC Class Codes: Y10T 29/49126 Assembling bases
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A method of building a multilevel electrical interconnect supported by metal pillars with air as a dielectric. The metal conductors and metal support pillars are formed using a photo-imagible polymer which serves the function of patterning and also provides a temporary support during construction.

Claims

1. A method of making a multilevel electrical airbridge interconnect on a substrate comprising,

applying a metal seed layer over an underlying layer,

selectively patterning a photopolymer mask on the metal seed layer,

applying an electrically conductive layer on the unmasked portion of the metal seed layer for forming a first conductor lavel and a first part of metal support pillars,

adding a second layer of a photopolymer mask for forming another part of the support pillars,

applying another part of the metal support pillars to the first part of the metal support pillars,

applying a second metal seed layer over the second mask and said another part layer of the metal pillars,

repeating these steps one or more times for building additional levels of metal pillar supported conductors, and

sequentially removing the seed and mask layers leaving electrical conductors supported from metal pillars with a dielectric therebetween.

2. The method of claim 1 wherein the removing of the seed layers and mask layers are separately performed beginning at the top.

3. The method of claim 1 wherein the metal seed layers are applied by evaporation and the electrical conductor layers and pillars are applied by electroplating.

4. The method of claim 3 wherein the electroplating, prior to the applying of the next seed layer, is electroplated approximately flush with the resist mask.

5. The method of claim 1 wherein a dielectric layer is applied between the substrate and the first metal seed layer.

6. The method of claim 1 wherein an adhesive layer is applied between the substrate and the first metal seed layer.

7. The method of claim 6 wherein the adhesive layer is sequentially removed.

8. The method of claim 1 wherein the dielectric is air.

9. The method of claim 1 wherein the dielectric is backfilled.

10. A method of making a multilevel electrical airbridge interconnect comprising,

applying a dielectric layer over a substrate,

applying an adhesion layer over the dielectric,

applying an metal seed layer over the adhesion layer,

selectively patterning a photopolymer mask on the metal seed layer,

applying an electrically conductive non-seed layer on the unmasked portion of the metal seed layer for forming a first conductor level and a first part of metal support pillars,

adding a second layer of a photopolymer mask for forming another part of the support pillars,

applying another part of the metal support pillars to the first part of the metal support pillars,

applying a second metal seed layer over the second mask and said another part layer of the metal pillars,

repeating steps three through eight one or more times for building additional levels of metal pillar supported conductors, and

sequentially removing the seed layers and the mask layers leaving electrical conductors supported from metal pillars with an air dielectric therebetween.

11. The method of claim 10 wherein the removing of the seed layers and mask layers are separately performed beginning at the top.

12. The method of claim 11 wherein the metal seed layers are applied by evaporation and the conductor layers and pillars are applied by electroplating.

13. The method of claim 10 wherein the electroplating, prior to the applying of the next seed layer, is electroplated flush with the resist mask.

14. A method of making a multilevel electrical airbridge interconnect on a substrate comprising,

applying a metal seed layer over an underlying layer,

selectively patterning a photopolymer mask on the metal seed layer,

applying an electrically conductive layer on the unmasked portion of the metal seed layer for forming a first conductor level and a first part of metal support pillars,

adding a second layer of a photopolymer mask for forming another part of the support pillars,

applying another part of the metal support pillars to the first part of the metal support pillars,

repeating these steps one or more times for building additional levels of metal pillar supported conductors, and

sequentially removing the seed and mask layers leaving electrical conductors supported from metal pillars with a dielectric therebetween.

15. The method of claim 14 wherein the removing of the seed layers and mask layers are separately performed beginning at the top.

16. The method of claim 14 wherein the metal seed layers are applied by evaporation and the electrical conductor layers and pillars are applied by electroplating.

17. The method of claim 14 wherein the electroplating, prior to the applying of the next seed layer, is electroplated approximately flush with the resist mask.

18. The method of claim 14 wherein a dielectric layer is applied between the substrate and the first metal seed layer.

19. The method of claim 14 wherein an adhesive layer is applied between the substrate and the first metal seed layer.

20. The method of claim 19 wherein the adhesive layer is sequentially removed.

21. The method of claim 14 wherein the dielectric is air.

22. The method of claim 14 wherein the dielectric is backfilled.