Brazing material

• US 4,921,158 A
• Filed: 02/24/1989
• Issued: 05/01/1990
• Est. Priority Date: 02/24/1989
• Status: Expired due to Term

• Current Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: General Instrument Corporation (CommScope Holding Company, Inc.)
• Inventors: Roth, Mark, Hwang, Kuen-Shyang, Sedigh, Mohammad
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US07/314,808
• Time in Patent Office: 431 Days
• Field of Search: 228/121, 228/122, 228/124, 228/123, 228/263.12, 428/620
• US Class Current: 228/123.1
• CPC Class Codes: B23K 2035/008 at least one of the workpieces being of silicium
• CPC Class Codes: B23K 35/005 at least one of the workpieces being of a refractory metal
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/4924 characterised by the materials
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: Y10T 428/12528 : Semiconductor component

Abstract

A mechanical and electrical bond between a silicon semiconductor wafer and a molybdenum contact is created by a multi-layer brazing material. The material includes adjacent layers of titanium and silver along with a layer which is either composed of aluminum or an aluminum-silicon composite. The material is heated to a temperature above its melting point. The aluminum reacts first with the silver, thereby dissolving less of the silicon. This reduces spiking and lowers the contact resistance.

Claims

1. An assembly for brazing a silicon semiconductor body and a metal component, said assembly including brazing material comprising a layer of titanium, a layer of silver formed adjacent said layer of titanium and a layer comprising an aluminum-silicon composite.

2. The assembly of claim 1 wherein said composite is approximately 11% silicon by weight.

3. The assembly of claim 1 wherein said aluminum-silicon composite layer is interposed between the surface of the semiconductor body and said titanium and silver layers.

4. The assembly of claim 1 wherein said layer of titanium has a thickness in the range of 200 to 1,000 angstroms.

5. The assembly of claim 1 wherein said layer of silver has a thickness in the range of 3,000 to 20,000 angstroms.

6. The assembly of claim 1 wherein said layers are all substantially coextensive.

7. An assembly for brazing a silicon semiconductor body and a metal component, said assembly including brazing material comprising a layer of titanium, a layer of silver formed adjacent said layer of titanium and a third layer comprising aluminum, said third layer being interposed between said layers of titanium and silver and the surface of the metal component.

8. An assembly for brazing a silicon semiconductor body and a metal component, said assembly including brazing material comprising a layer of titanium, a layer of silver formed adjacent said layer of titanium and a third layer comprising aluminum, said layer of titanium having a thickness of approximately 500 angstroms.

9. An assembly for brazing a silicon semiconductor body and a metal component, said assembly including brazing material comprising a layer of titanium, a layer of silver formed adjacent said layer of titanium and a third layer comprising aluminum having a thickness in the range of 30,000-60,000 angstroms.

10. A method for forming a mechanical and electrical bond between the surface of a silicon semiconductor body and a metal component, the method comprising the steps of:

forming a layer of titanium, forming a layer of silver adjacent the layer of titaniumm forming a layer composed of an aluminum-silicon composite and thereafter heating the assembly to a temperature above the melting point of the formed layers.

14. The method of claim 10 wherein said aluminum-silicon composite layer is formed between the surface of the semiconductor body and the titanium and silver layers.

15. The method of claim 10 wherein the composite is 11% silicon by weight.

16. The method of claim 10 wherein the material is heated in a range of 600 to 800 degrees C.

17. The method of claim 10 wherein the material is heated to approximately 740 degrees C.

18. The method of claim 10 wherein said layer of titanium has a thickness in the range of 200 to 1000 angstroms.

19. The method of claim 10 wherein said layer of silver has a thickness in the range of 3,000 to 20,000 angstroms.

20. The method of claim 10 wherein said layers are all substantially coextensive.

11. A method for forming a mechanical and electrical bond between the surface of a silicon semiconductor body and a metal component, the method comprising the steps of:

depositing a multi-layer of brazing material between the semiconductor surface and the metal component and heating the metal to a temperature above its melting point, the material being deposited by forming a layer of titanium, forming a layer of silver adjacent the layer of titanium and forming a third layer comprising aluminum, said third layer being formed between the layers of titanium and silver and the surface of the component.

12. A method for forming a mechanical and electrical bond between the surface of a silicon semiconductor body and a metal component, the method comprising the steps of:

forming a layer of titanium of a thickness of approximately 500 angstroms, forming a layer of silver adjacent the layer of titanium and forming a third layer composed of aluminum.

13. A method for forming a mechanical and electrical bond between the surface of the silicon semiductor body and a metal component, the method comprising the steps of:

forming a layer of titanium, forming a layer of silver adjacent the layer of titanium and forming a third layer composed of aluminum having a thickness in the range of 30,000 to 60,000 angstroms.